JPS55162270A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55162270A
JPS55162270A JP6928879A JP6928879A JPS55162270A JP S55162270 A JPS55162270 A JP S55162270A JP 6928879 A JP6928879 A JP 6928879A JP 6928879 A JP6928879 A JP 6928879A JP S55162270 A JPS55162270 A JP S55162270A
Authority
JP
Japan
Prior art keywords
electrode
substrate
source
layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6928879A
Other languages
Japanese (ja)
Other versions
JPH0213828B2 (en
Inventor
Yutaka Otowa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6928879A priority Critical patent/JPS55162270A/en
Publication of JPS55162270A publication Critical patent/JPS55162270A/en
Publication of JPH0213828B2 publication Critical patent/JPH0213828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce source resistance or drain resistance by the method wherein a groove of the depth reaching a substrate from the surface of a source or a drain part is provided and connection to the substrate is done by the electrode formed in the groove. CONSTITUTION:P epitaxial layer 2 on p<+> substrate 1 has surface orientation (100) and forms n<+>-type source and drain layers 3 and 8. SiO2 film 9 is selectively opened, and by operating anisotropic etching from the surface of n<+> layer 3, groove 10 reaching substrate 1 is formed. Next, when source electrode 5', gate electrode 6 and drain electrode 7 are formed, electrode 5' attaches to the groove wall, and source layer 3 and substrate 1 are connected by electrode 5'. As a result, it is no longer necessary to form a p<+> diffused layer in the center of layer 3 as in the conventional method, so that no crystal defect or self-addition of an impurity occurs. Further, it is possible to reduce source resistance or drain resistance by these electrodes.
JP6928879A 1979-06-02 1979-06-02 Semiconductor device Granted JPS55162270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6928879A JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6928879A JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55162270A true JPS55162270A (en) 1980-12-17
JPH0213828B2 JPH0213828B2 (en) 1990-04-05

Family

ID=13398255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6928879A Granted JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55162270A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885528A (en) * 1981-11-17 1983-05-21 Olympus Optical Co Ltd Forming method of electrode for semiconductor device
EP0858113A1 (en) * 1997-01-31 1998-08-12 Oki Electric Industry Co., Ltd. Semiconductor device
EP0988651A1 (en) * 1997-06-10 2000-03-29 Spectrian Corporation Lateral diffused mos transistor with trench source contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885528A (en) * 1981-11-17 1983-05-21 Olympus Optical Co Ltd Forming method of electrode for semiconductor device
EP0858113A1 (en) * 1997-01-31 1998-08-12 Oki Electric Industry Co., Ltd. Semiconductor device
US5977592A (en) * 1997-01-31 1999-11-02 Oki Electric Industry Co., Ltd. Semiconductor device having an improved structure and capable of greatly reducing its occupied area
EP0988651A1 (en) * 1997-06-10 2000-03-29 Spectrian Corporation Lateral diffused mos transistor with trench source contact
EP0988651B1 (en) * 1997-06-10 2013-09-25 Rovec Acquisitions Ltd. L.L.C. LDMOS transistor structure with trench source contact

Also Published As

Publication number Publication date
JPH0213828B2 (en) 1990-04-05

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