JPS56104468A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS56104468A
JPS56104468A JP584580A JP584580A JPS56104468A JP S56104468 A JPS56104468 A JP S56104468A JP 584580 A JP584580 A JP 584580A JP 584580 A JP584580 A JP 584580A JP S56104468 A JPS56104468 A JP S56104468A
Authority
JP
Japan
Prior art keywords
film
oxidation
polycrystalline
si3n4
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP584580A
Other languages
Japanese (ja)
Other versions
JPS6159675B2 (en
Inventor
Masaki Yoshimaru
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP584580A priority Critical patent/JPS56104468A/en
Publication of JPS56104468A publication Critical patent/JPS56104468A/en
Publication of JPS6159675B2 publication Critical patent/JPS6159675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To flatten the surface of the MOS semiconductor device by covering the polycrystalline Si side surface exposed upon oxidation with an Si3N4 to thus prevent the oxidation of the polycrystalline Si side surface, precisely controlling the width and length of the gate and preventing the occurrence of the projection of the oxide film. CONSTITUTION:An SiO2 film 22, a polycrystalline film 23 containing impurity, an SiO2 film 24 and an Si3N4 film 25 are selectively formed on the Si substrate 21, boron is injected thereto, and an isolating region 27 is formed. An SiO2 film 28 is then formed by thermal oxidation, and the entire surface is covered with an Si3N4 film 29. The Si3N4 film is removed by a sputter etching or the like, and the film 25, 29 are retained only on the upper and side surfaces of the polycrystalline silicon. An isolating thick oxide film 30 is formed by thermal oxidation. Since the polycrystalline Si side surface is covered with the film 29, no lateral oxidation occurs, nor the projection of the oxide film occurred due to the oxidation of the side surface of the Si 23.
JP584580A 1980-01-23 1980-01-23 Manufacture of mos semiconductor device Granted JPS56104468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP584580A JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP584580A JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS56104468A true JPS56104468A (en) 1981-08-20
JPS6159675B2 JPS6159675B2 (en) 1986-12-17

Family

ID=11622344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP584580A Granted JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS56104468A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840839A (en) * 1981-09-04 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS6473772A (en) * 1987-09-16 1989-03-20 Nec Corp Manufacture of semiconductor storage device
JPH02230775A (en) * 1989-03-02 1990-09-13 Mitsubishi Electric Corp Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632778U (en) * 1986-06-18 1988-01-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840839A (en) * 1981-09-04 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS6473772A (en) * 1987-09-16 1989-03-20 Nec Corp Manufacture of semiconductor storage device
JPH02230775A (en) * 1989-03-02 1990-09-13 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6159675B2 (en) 1986-12-17

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