JPS6473772A - Manufacture of semiconductor storage device - Google Patents
Manufacture of semiconductor storage deviceInfo
- Publication number
- JPS6473772A JPS6473772A JP62233115A JP23311587A JPS6473772A JP S6473772 A JPS6473772 A JP S6473772A JP 62233115 A JP62233115 A JP 62233115A JP 23311587 A JP23311587 A JP 23311587A JP S6473772 A JPS6473772 A JP S6473772A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- si3n4
- storage device
- semiconductor storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To prevent reduction of a channel width in preparing a floating gate electrode in the direction of channel width in a self-alignment manner, by providing a non-oxidizable film on the upper and side surfaces of a poly-Si floating gate to oxidize a substrate. CONSTITUTION:An SiO2 film 3, phosphorus added poly Si film 4, an SiO2 film 5 and an Si3N4 film 6 are laminated onto a P-type Si substrate 1 then a resist mask 10 is used for patterning. B-ion implantation is conducted to form a channel stopper 2. An SiO2 thick film 11 is shaped on the side surface by oxidation then covered with an Si3N4 film 12. An SiO2 thick film 7 is formed by wet oxidation which remains Si3N412a only on the SiO2 film 11 of the sidewall through RIE, then an SiO2 thick film 7 is formed, a sidewall 12a is removed, and the Si3N4 film 6 is eliminated. A control electrode, etc., is thereafter prepared conventionally to complete a semiconductor storage device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62233115A JPS6473772A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62233115A JPS6473772A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473772A true JPS6473772A (en) | 1989-03-20 |
Family
ID=16950001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62233115A Pending JPS6473772A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473772A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389005A (en) * | 1993-06-22 | 1995-02-14 | Yazaki Corporation | Waterproof electric connector seal member |
| US6143611A (en) * | 1998-07-30 | 2000-11-07 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
| US6844252B2 (en) * | 1996-09-17 | 2005-01-18 | Micron Technology, Inc. | Semiconductor processing methods of forming a conductive gate and line |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104468A (en) * | 1980-01-23 | 1981-08-20 | Oki Electric Ind Co Ltd | Manufacture of mos semiconductor device |
-
1987
- 1987-09-16 JP JP62233115A patent/JPS6473772A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104468A (en) * | 1980-01-23 | 1981-08-20 | Oki Electric Ind Co Ltd | Manufacture of mos semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389005A (en) * | 1993-06-22 | 1995-02-14 | Yazaki Corporation | Waterproof electric connector seal member |
| US6844252B2 (en) * | 1996-09-17 | 2005-01-18 | Micron Technology, Inc. | Semiconductor processing methods of forming a conductive gate and line |
| US7170139B2 (en) | 1996-09-17 | 2007-01-30 | Micron Technology, Inc. | Semiconductor constructions |
| US6143611A (en) * | 1998-07-30 | 2000-11-07 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
| US6576939B1 (en) | 1998-07-30 | 2003-06-10 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
| US6713355B2 (en) | 1998-07-30 | 2004-03-30 | Micron Technology, Inc. | Semiconductor processing method |
| US6838365B2 (en) | 1998-07-30 | 2005-01-04 | Micron Technology, Inc. | Methods of forming electronic components, and a conductive line |
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