JPS5538017A - Manufacturing of semiconductor memory device - Google Patents
Manufacturing of semiconductor memory deviceInfo
- Publication number
- JPS5538017A JPS5538017A JP11050478A JP11050478A JPS5538017A JP S5538017 A JPS5538017 A JP S5538017A JP 11050478 A JP11050478 A JP 11050478A JP 11050478 A JP11050478 A JP 11050478A JP S5538017 A JPS5538017 A JP S5538017A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- polysilicon layer
- mask
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To form a silicon gate type MNOS memory with good integration efficiency by utilizing self-alignment method using a polysilicon layer as a mask. CONSTITUTION:F field oxidation film 2 on surface of a P-type Si base plate 1 is etched to uncover an element-forming region, and on this surface, a three-layer structure which is composed of a gate oxide film 3, a silicon nitride film 4 and a polysilicon layer 5 is formed by etching process using a photoresist mask 9. And, only the silicon nitride film 4 is side-etched to prepare a narrow-width silicon nitride film 4' and an entire surface of the Si base plate is oxidized to form an SiO2 film 10. And then, the SiO2 film 10, except its side, is removed. As ion is injected using the polysilicon layer 5 as a mask and respective regions of an n-type source 6 and a drain 7 are formed by self-alignment method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11050478A JPS5538017A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11050478A JPS5538017A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5538017A true JPS5538017A (en) | 1980-03-17 |
Family
ID=14537437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11050478A Pending JPS5538017A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5538017A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202576A (en) * | 1982-05-21 | 1983-11-25 | Nec Corp | Insulated gate type field-effect transistor |
-
1978
- 1978-09-08 JP JP11050478A patent/JPS5538017A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202576A (en) * | 1982-05-21 | 1983-11-25 | Nec Corp | Insulated gate type field-effect transistor |
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