JPS5612749A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5612749A
JPS5612749A JP8887179A JP8887179A JPS5612749A JP S5612749 A JPS5612749 A JP S5612749A JP 8887179 A JP8887179 A JP 8887179A JP 8887179 A JP8887179 A JP 8887179A JP S5612749 A JPS5612749 A JP S5612749A
Authority
JP
Japan
Prior art keywords
oxidation resistant
film
si3n4
resistant film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8887179A
Other languages
Japanese (ja)
Other versions
JPS6028387B2 (en
Inventor
Toyoki Takemoto
Hiroshi Wakebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8887179A priority Critical patent/JPS6028387B2/en
Publication of JPS5612749A publication Critical patent/JPS5612749A/en
Publication of JPS6028387B2 publication Critical patent/JPS6028387B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To provide a plurality of island regions with insulated separation between the bottom and the side by the oxide film by oxidizing the substrate with the first oxidation resistant provided on the surface thereof having several openings etched and the second oxidation resistant film on the opening side. CONSTITUTION:The Si substrate 21 is etched with the first oxidation resistant film 22 mask made of Si3N4 or the like provided thereon to form several openings. Then, with the second oxidation resistant film mask 24 made of Si3N4 provided on the side of the opening, oxidization is performed to form an Si island region surrounded by the bottom and the side on the SiO2 film 27. A bipolar transistor, a FET and the like are provided in this island region. This enables easy formation of small element regions separately insulated from each other thereby attaining a high density of integration.
JP8887179A 1979-07-12 1979-07-12 Manufacturing method of semiconductor device Expired JPS6028387B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8887179A JPS6028387B2 (en) 1979-07-12 1979-07-12 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8887179A JPS6028387B2 (en) 1979-07-12 1979-07-12 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612749A true JPS5612749A (en) 1981-02-07
JPS6028387B2 JPS6028387B2 (en) 1985-07-04

Family

ID=13955065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8887179A Expired JPS6028387B2 (en) 1979-07-12 1979-07-12 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6028387B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154855A (en) * 1981-03-19 1982-09-24 Toshiba Corp Manufacture of semiconductor device
JPS57154856A (en) * 1981-03-19 1982-09-24 Toshiba Corp Semiconductor device
JPS58197742A (en) * 1982-05-13 1983-11-17 Seiko Epson Corp Isolation by dielectric
JPS58182177U (en) * 1982-05-31 1983-12-05 リズム時計工業株式会社 Time adjustment mechanism of time signal clock
JPS598346A (en) * 1982-06-30 1984-01-17 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Integrated circuit completely isolated with dielectric and method of forming same
JPS6072243A (en) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd Semiconductor ic device
JPS6074452A (en) * 1983-09-29 1985-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6085671U (en) * 1983-11-02 1985-06-13 株式会社荏原製作所 check valve
JPS60127740A (en) * 1983-12-15 1985-07-08 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
US4563227A (en) * 1981-12-08 1986-01-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a semiconductor device
JPS61125039A (en) * 1984-11-21 1986-06-12 Nec Corp Semiconductor device and manufacture thereof
US4685198A (en) * 1985-07-25 1987-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing isolated semiconductor devices
JPH0642510B2 (en) * 1983-06-13 1994-06-01 エヌ・シー・アール・インターナショナル・インコーポレイテッド Method of forming a semiconductor structure
EP1067599A1 (en) * 1999-07-09 2001-01-10 STMicroelectronics S.r.l. A method of forming structures with buried oxide regions in a semiconductor substrate
DE19654301B4 (en) * 1995-12-30 2005-03-03 Hyundai Electronics Industries Co., Ltd., Ichon Process for producing a substrate with silicon on an insulator
JP2013048161A (en) * 2011-08-29 2013-03-07 Citizen Holdings Co Ltd Semiconductor device manufacturing method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154856A (en) * 1981-03-19 1982-09-24 Toshiba Corp Semiconductor device
JPH0363219B2 (en) * 1981-03-19 1991-09-30 Tokyo Shibaura Electric Co
JPS57154855A (en) * 1981-03-19 1982-09-24 Toshiba Corp Manufacture of semiconductor device
US4563227A (en) * 1981-12-08 1986-01-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a semiconductor device
JPS58197742A (en) * 1982-05-13 1983-11-17 Seiko Epson Corp Isolation by dielectric
JPS58182177U (en) * 1982-05-31 1983-12-05 リズム時計工業株式会社 Time adjustment mechanism of time signal clock
JPS598346A (en) * 1982-06-30 1984-01-17 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Integrated circuit completely isolated with dielectric and method of forming same
JPS6347337B2 (en) * 1982-06-30 1988-09-21 Intaanashonaru Bijinesu Mashiinzu Corp
JPH0642510B2 (en) * 1983-06-13 1994-06-01 エヌ・シー・アール・インターナショナル・インコーポレイテッド Method of forming a semiconductor structure
JPS6072243A (en) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd Semiconductor ic device
US4814287A (en) * 1983-09-28 1989-03-21 Matsushita Electric Industrial Co. Ltd. Method of manufacturing a semiconductor integrated circuit device
JPS6074452A (en) * 1983-09-29 1985-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6085671U (en) * 1983-11-02 1985-06-13 株式会社荏原製作所 check valve
JPS60127740A (en) * 1983-12-15 1985-07-08 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS61125039A (en) * 1984-11-21 1986-06-12 Nec Corp Semiconductor device and manufacture thereof
JPH0478178B2 (en) * 1984-11-21 1992-12-10 Nippon Electric Co
US4685198A (en) * 1985-07-25 1987-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing isolated semiconductor devices
DE19654301B4 (en) * 1995-12-30 2005-03-03 Hyundai Electronics Industries Co., Ltd., Ichon Process for producing a substrate with silicon on an insulator
EP1067599A1 (en) * 1999-07-09 2001-01-10 STMicroelectronics S.r.l. A method of forming structures with buried oxide regions in a semiconductor substrate
US6455391B1 (en) 1999-07-09 2002-09-24 Stmicroelectronics S.R.L. Method of forming structures with buried regions in a semiconductor device
JP2013048161A (en) * 2011-08-29 2013-03-07 Citizen Holdings Co Ltd Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPS6028387B2 (en) 1985-07-04

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