JPS55124270A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS55124270A
JPS55124270A JP3279579A JP3279579A JPS55124270A JP S55124270 A JPS55124270 A JP S55124270A JP 3279579 A JP3279579 A JP 3279579A JP 3279579 A JP3279579 A JP 3279579A JP S55124270 A JPS55124270 A JP S55124270A
Authority
JP
Japan
Prior art keywords
region
island
nitride film
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3279579A
Other languages
Japanese (ja)
Other versions
JPS6214106B2 (en
Inventor
Kazutoshi Nagano
Tatsunori Nakajima
Kosuke Yasuno
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3279579A priority Critical patent/JPS55124270A/en
Publication of JPS55124270A publication Critical patent/JPS55124270A/en
Publication of JPS6214106B2 publication Critical patent/JPS6214106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the slack of a substrate and the deformation of an island in a junction type field effect transistor by utilizing a reactive gate region as porous openings to shorten the porosity forming time and reduce the thickness of nitride film. CONSTITUTION:An insulator 32 is formed by oxidizing porous silicon on an n-type silicon substrate 31 to form an island region 33, source S region 19 and drain D region 20 are elevationally symmetrically formed at the gate region 32 so that the region 23 is effectively operated while shaded region 24 is not operated. Accordingly, the region 23 becomes reactive gate region 24. The region 24 is perforated with openings simultaneously upon the nitride film of the isolating region and perforated in porous state simultaneously upon the isolating region in step of perforating the porosity. Since the perforation is simultaneously proceeded on both the surface of the region 38 and the surface of the region 24, it can shorten the perforating time and prevent the slack of the substrate and the deformation of the island by forming the nitride film of mask to approx. 1,000Angstrom .
JP3279579A 1979-03-19 1979-03-19 Junction type field effect transistor Granted JPS55124270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3279579A JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS55124270A true JPS55124270A (en) 1980-09-25
JPS6214106B2 JPS6214106B2 (en) 1987-03-31

Family

ID=12368776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3279579A Granted JPS55124270A (en) 1979-03-19 1979-03-19 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS55124270A (en)

Also Published As

Publication number Publication date
JPS6214106B2 (en) 1987-03-31

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