JPS53136958A - Selective impurity diffusion method into semiconductor substrate - Google Patents

Selective impurity diffusion method into semiconductor substrate

Info

Publication number
JPS53136958A
JPS53136958A JP5138777A JP5138777A JPS53136958A JP S53136958 A JPS53136958 A JP S53136958A JP 5138777 A JP5138777 A JP 5138777A JP 5138777 A JP5138777 A JP 5138777A JP S53136958 A JPS53136958 A JP S53136958A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
impurity diffusion
diffusion method
selective impurity
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5138777A
Other languages
Japanese (ja)
Other versions
JPS6028383B2 (en
Inventor
Takashi Sawai
Fumihiko Yanagawa
Junichi Murota
Susumu Muramoto
Tetsuo Hosoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5138777A priority Critical patent/JPS6028383B2/en
Publication of JPS53136958A publication Critical patent/JPS53136958A/en
Publication of JPS6028383B2 publication Critical patent/JPS6028383B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To carry out a selective oxidation by sticking an oxidation suppression layer to an impurity-added poly Si which is formed on the substrate via a thin film, and then to form a diffusion layer within the substrate via the thin film.
COPYRIGHT: (C)1978,JPO&Japio
JP5138777A 1977-05-04 1977-05-04 Selective impurity diffusion method into semiconductor substrate Expired JPS6028383B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5138777A JPS6028383B2 (en) 1977-05-04 1977-05-04 Selective impurity diffusion method into semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5138777A JPS6028383B2 (en) 1977-05-04 1977-05-04 Selective impurity diffusion method into semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS53136958A true JPS53136958A (en) 1978-11-29
JPS6028383B2 JPS6028383B2 (en) 1985-07-04

Family

ID=12885524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5138777A Expired JPS6028383B2 (en) 1977-05-04 1977-05-04 Selective impurity diffusion method into semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS6028383B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153146A (en) * 1990-05-28 1992-10-06 Kabushiki Kaisha Toshiba Maufacturing method of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153146A (en) * 1990-05-28 1992-10-06 Kabushiki Kaisha Toshiba Maufacturing method of semiconductor devices

Also Published As

Publication number Publication date
JPS6028383B2 (en) 1985-07-04

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