JPS5389374A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5389374A
JPS5389374A JP360777A JP360777A JPS5389374A JP S5389374 A JPS5389374 A JP S5389374A JP 360777 A JP360777 A JP 360777A JP 360777 A JP360777 A JP 360777A JP S5389374 A JPS5389374 A JP S5389374A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
polycrystalline
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP360777A
Other languages
Japanese (ja)
Inventor
Toru Mochizuki
Kenji Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP360777A priority Critical patent/JPS5389374A/en
Publication of JPS5389374A publication Critical patent/JPS5389374A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve controllability by performing diffusion and oxidation by depositing a polycrystalline Si layer at the time of forming first and second layer electrode wirings on a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP360777A 1977-01-18 1977-01-18 Production of semiconductor device Pending JPS5389374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP360777A JPS5389374A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP360777A JPS5389374A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5389374A true JPS5389374A (en) 1978-08-05

Family

ID=11562169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP360777A Pending JPS5389374A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389374A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524420A (en) * 1978-08-10 1980-02-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulated gate type filed effect transistor
JPS5536976A (en) * 1978-09-05 1980-03-14 Sanyo Electric Co Ltd Production of semiconductor device
JPS5662370A (en) * 1979-10-26 1981-05-28 Toshiba Corp Manufacturing of semiconductor device
JPS60167354A (en) * 1984-02-09 1985-08-30 Seiko Epson Corp Manufacture of semiconductor device
JPS60223166A (en) * 1984-04-18 1985-11-07 Mitsubishi Electric Corp Manufacture of field-effect transistor
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS6362356A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524420A (en) * 1978-08-10 1980-02-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulated gate type filed effect transistor
JPS5536976A (en) * 1978-09-05 1980-03-14 Sanyo Electric Co Ltd Production of semiconductor device
JPS6120153B2 (en) * 1978-09-05 1986-05-21 Sanyo Electric Co
JPS5662370A (en) * 1979-10-26 1981-05-28 Toshiba Corp Manufacturing of semiconductor device
JPS60167354A (en) * 1984-02-09 1985-08-30 Seiko Epson Corp Manufacture of semiconductor device
JPS60223166A (en) * 1984-04-18 1985-11-07 Mitsubishi Electric Corp Manufacture of field-effect transistor
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS6362356A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

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