JPS54589A - Burying method of insulator - Google Patents

Burying method of insulator

Info

Publication number
JPS54589A
JPS54589A JP6482277A JP6482277A JPS54589A JP S54589 A JPS54589 A JP S54589A JP 6482277 A JP6482277 A JP 6482277A JP 6482277 A JP6482277 A JP 6482277A JP S54589 A JPS54589 A JP S54589A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
insulator
burying
surface
burying method
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6482277A
Inventor
Hisayuki Higuchi
Mitsuo Nanba
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To flatten the surface of insulating and isolating regions by first forming a shallow polycrystalline Si layer within grooves thereafter oxidizing said layer to an insulator and further burying the recesses having been produced on the insulator surface by the use of a similar method at the time of burying the insulator within the grooves provided to a semiconductor substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP6482277A 1977-06-03 1977-06-03 Burying method of insulator Pending JPS54589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6482277A JPS54589A (en) 1977-06-03 1977-06-03 Burying method of insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6482277A JPS54589A (en) 1977-06-03 1977-06-03 Burying method of insulator

Publications (1)

Publication Number Publication Date
JPS54589A true true JPS54589A (en) 1979-01-05

Family

ID=13269320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6482277A Pending JPS54589A (en) 1977-06-03 1977-06-03 Burying method of insulator

Country Status (1)

Country Link
JP (1) JPS54589A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108580A (en) * 1980-01-31 1981-08-28 Hokkai Can Method and device for cleaning pallet
JPS5763843A (en) * 1980-08-22 1982-04-17 Ibm Method of forming recess dielectric region on silicon substrate
JPS57102045A (en) * 1980-12-18 1982-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS57170547A (en) * 1981-04-13 1982-10-20 Toshiba Corp Manufacture of semiconductor device
JPS57202756A (en) * 1982-04-12 1982-12-11 Toshiba Corp Manufacture of semiconductor device
JPS57202755A (en) * 1982-04-12 1982-12-11 Toshiba Corp Manufacture of semiconductor device
US4369565A (en) * 1979-08-31 1983-01-25 Hitachi, Ltd. Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions
JPS5833851A (en) * 1981-08-24 1983-02-28 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPS5854651A (en) * 1981-09-28 1983-03-31 Nec Corp Manufacture of semiconductor device
JPS58139443A (en) * 1982-02-15 1983-08-18 Toshiba Corp Manufacture of semiconductor device
JPS58143548A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of semiconductor device
JPS5958837A (en) * 1982-09-29 1984-04-04 Fujitsu Ltd Manufacture of semiconductor device
US4470062A (en) * 1979-08-31 1984-09-04 Hitachi, Ltd. Semiconductor device having isolation regions
JPS59189646A (en) * 1983-04-12 1984-10-27 Seiko Epson Corp Manufacture of semiconductor device
EP0055521B1 (en) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Method of filling a groove in a semiconductor substrate
JPS61268038A (en) * 1985-05-22 1986-11-27 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369565A (en) * 1979-08-31 1983-01-25 Hitachi, Ltd. Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions
US4470062A (en) * 1979-08-31 1984-09-04 Hitachi, Ltd. Semiconductor device having isolation regions
JPS6253234B2 (en) * 1980-01-31 1987-11-09 Hotsukai Seikan Kk
JPS56108580A (en) * 1980-01-31 1981-08-28 Hokkai Can Method and device for cleaning pallet
JPS5763843A (en) * 1980-08-22 1982-04-17 Ibm Method of forming recess dielectric region on silicon substrate
EP0055521B1 (en) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Method of filling a groove in a semiconductor substrate
JPH0330300B2 (en) * 1980-12-18 1991-04-26
JPS57102045A (en) * 1980-12-18 1982-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS57170547A (en) * 1981-04-13 1982-10-20 Toshiba Corp Manufacture of semiconductor device
JPH0556017B2 (en) * 1981-04-13 1993-08-18 Tokyo Shibaura Electric Co
JPS5833851A (en) * 1981-08-24 1983-02-28 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPH0258778B2 (en) * 1981-09-28 1990-12-10 Nippon Electric Co
JPS5854651A (en) * 1981-09-28 1983-03-31 Nec Corp Manufacture of semiconductor device
JPS58139443A (en) * 1982-02-15 1983-08-18 Toshiba Corp Manufacture of semiconductor device
JPH0445980B2 (en) * 1982-02-15 1992-07-28 Tokyo Shibaura Electric Co
JPS58143548A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of semiconductor device
JPS57202755A (en) * 1982-04-12 1982-12-11 Toshiba Corp Manufacture of semiconductor device
JPS57202756A (en) * 1982-04-12 1982-12-11 Toshiba Corp Manufacture of semiconductor device
JPS5958837A (en) * 1982-09-29 1984-04-04 Fujitsu Ltd Manufacture of semiconductor device
JPS59189646A (en) * 1983-04-12 1984-10-27 Seiko Epson Corp Manufacture of semiconductor device
JPS61268038A (en) * 1985-05-22 1986-11-27 Mitsubishi Electric Corp Manufacture of semiconductor device

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