JPS52151572A - Insulated gate semiconductor device and its production - Google Patents

Insulated gate semiconductor device and its production

Info

Publication number
JPS52151572A
JPS52151572A JP596177A JP596177A JPS52151572A JP S52151572 A JPS52151572 A JP S52151572A JP 596177 A JP596177 A JP 596177A JP 596177 A JP596177 A JP 596177A JP S52151572 A JPS52151572 A JP S52151572A
Authority
JP
Japan
Prior art keywords
semiconductor device
film
production
insulated gate
abovementioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP596177A
Other languages
Japanese (ja)
Other versions
JPS5858814B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52005961A priority Critical patent/JPS5858814B2/en
Publication of JPS52151572A publication Critical patent/JPS52151572A/en
Publication of JPS5858814B2 publication Critical patent/JPS5858814B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To reduce percent defective and improve quality by providing a semiconductor device comprising a gate insulation layer, a semiconductor layer provided on said film and a second insulation film which fills the gaps directly under edges of the abovementioned layer produced by side-etching of the abovementioned film when the abovementioned film etched.
COPYRIGHT: (C)1977,JPO&Japio
JP52005961A 1977-01-24 1977-01-24 Manufacturing method of insulated gate semiconductor device Expired JPS5858814B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52005961A JPS5858814B2 (en) 1977-01-24 1977-01-24 Manufacturing method of insulated gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52005961A JPS5858814B2 (en) 1977-01-24 1977-01-24 Manufacturing method of insulated gate semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8329371A Division JPS5112507B2 (en) 1971-10-22 1971-10-22

Publications (2)

Publication Number Publication Date
JPS52151572A true JPS52151572A (en) 1977-12-16
JPS5858814B2 JPS5858814B2 (en) 1983-12-27

Family

ID=11625473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52005961A Expired JPS5858814B2 (en) 1977-01-24 1977-01-24 Manufacturing method of insulated gate semiconductor device

Country Status (1)

Country Link
JP (1) JPS5858814B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789258A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789258A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5858814B2 (en) 1983-12-27

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