JPS5326683A - Manufacture of semiconductor devic e - Google Patents
Manufacture of semiconductor devic eInfo
- Publication number
- JPS5326683A JPS5326683A JP10062476A JP10062476A JPS5326683A JP S5326683 A JPS5326683 A JP S5326683A JP 10062476 A JP10062476 A JP 10062476A JP 10062476 A JP10062476 A JP 10062476A JP S5326683 A JPS5326683 A JP S5326683A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- devic
- semiconductor
- semiconductor devic
- termianl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a high voltage-resistance MOSFET with a stabilized characteristics by forming a gate insulator film partially thick on the channel termianl.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10062476A JPS605074B2 (en) | 1976-08-25 | 1976-08-25 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10062476A JPS605074B2 (en) | 1976-08-25 | 1976-08-25 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5326683A true JPS5326683A (en) | 1978-03-11 |
JPS605074B2 JPS605074B2 (en) | 1985-02-08 |
Family
ID=14278979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10062476A Expired JPS605074B2 (en) | 1976-08-25 | 1976-08-25 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS605074B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423480A (en) * | 1977-07-25 | 1979-02-22 | Agency Of Ind Science & Technol | Manufacture for mis type semiconductor element |
JPS61248565A (en) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS6344769A (en) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | Field effect transistor and manufacture of the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0342625Y2 (en) * | 1985-01-11 | 1991-09-06 |
-
1976
- 1976-08-25 JP JP10062476A patent/JPS605074B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423480A (en) * | 1977-07-25 | 1979-02-22 | Agency Of Ind Science & Technol | Manufacture for mis type semiconductor element |
JPS61248565A (en) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS6344769A (en) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | Field effect transistor and manufacture of the same |
Also Published As
Publication number | Publication date |
---|---|
JPS605074B2 (en) | 1985-02-08 |
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