JPS5326683A - Manufacture of semiconductor devic e - Google Patents

Manufacture of semiconductor devic e

Info

Publication number
JPS5326683A
JPS5326683A JP10062476A JP10062476A JPS5326683A JP S5326683 A JPS5326683 A JP S5326683A JP 10062476 A JP10062476 A JP 10062476A JP 10062476 A JP10062476 A JP 10062476A JP S5326683 A JPS5326683 A JP S5326683A
Authority
JP
Japan
Prior art keywords
manufacture
devic
semiconductor
semiconductor devic
termianl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10062476A
Other languages
Japanese (ja)
Other versions
JPS605074B2 (en
Inventor
Yoshiaki Kamigaki
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10062476A priority Critical patent/JPS605074B2/en
Publication of JPS5326683A publication Critical patent/JPS5326683A/en
Publication of JPS605074B2 publication Critical patent/JPS605074B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high voltage-resistance MOSFET with a stabilized characteristics by forming a gate insulator film partially thick on the channel termianl.
COPYRIGHT: (C)1978,JPO&Japio
JP10062476A 1976-08-25 1976-08-25 Manufacturing method of semiconductor device Expired JPS605074B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10062476A JPS605074B2 (en) 1976-08-25 1976-08-25 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10062476A JPS605074B2 (en) 1976-08-25 1976-08-25 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5326683A true JPS5326683A (en) 1978-03-11
JPS605074B2 JPS605074B2 (en) 1985-02-08

Family

ID=14278979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10062476A Expired JPS605074B2 (en) 1976-08-25 1976-08-25 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS605074B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423480A (en) * 1977-07-25 1979-02-22 Agency Of Ind Science & Technol Manufacture for mis type semiconductor element
JPS61248565A (en) * 1985-04-26 1986-11-05 Mitsubishi Electric Corp Semiconductor device
JPS6344769A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342625Y2 (en) * 1985-01-11 1991-09-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423480A (en) * 1977-07-25 1979-02-22 Agency Of Ind Science & Technol Manufacture for mis type semiconductor element
JPS61248565A (en) * 1985-04-26 1986-11-05 Mitsubishi Electric Corp Semiconductor device
JPS6344769A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same

Also Published As

Publication number Publication date
JPS605074B2 (en) 1985-02-08

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS5326683A (en) Manufacture of semiconductor devic e
JPS5222481A (en) Method of manufacturing semiconductor device
JPS538072A (en) Semiconductor device
JPS5372471A (en) Mis type semiconductor device
JPS5353262A (en) Manufacture of semiconductor device
JPS5228868A (en) Semiconductor device
JPS5357773A (en) Semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS52100877A (en) Field effect transistor of junction type
JPS5295984A (en) Vertical junction type field effect transistor
JPS5245275A (en) Mis type semiconductor device
JPS5231691A (en) Semiconductor luminous device
JPS5362987A (en) Production of mos type semiconductor device
JPS5382181A (en) Manufacture for semiconductor device
JPS52146575A (en) Production of semiconductor device
JPS535580A (en) Field effect type semiconductor device
JPS52140282A (en) Device and manufacture for mos-type semiconductor
JPS5258372A (en) Semiconductor device and its production
JPS547879A (en) Manufacture for semiconductor device
JPS51117581A (en) Manufacturing method of mos type semiconductor equipment
JPS5298460A (en) Lead device for thyristor arcing circuit
JPS5397771A (en) Semiconductor device
JPS5271986A (en) Beam lead type semiconductor device
JPS5397780A (en) Production of insulated gate field effect transistor