JPS52140282A - Device and manufacture for mos-type semiconductor - Google Patents
Device and manufacture for mos-type semiconductorInfo
- Publication number
- JPS52140282A JPS52140282A JP5738776A JP5738776A JPS52140282A JP S52140282 A JPS52140282 A JP S52140282A JP 5738776 A JP5738776 A JP 5738776A JP 5738776 A JP5738776 A JP 5738776A JP S52140282 A JPS52140282 A JP S52140282A
- Authority
- JP
- Japan
- Prior art keywords
- mos
- manufacture
- type semiconductor
- poly crystal
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain high-density wiring with a good yield by composing the gate, source and drain electrodes with poly crystal Si of low resistance and by providing the insulating poly crystal Si between these electrodes.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5738776A JPS52140282A (en) | 1976-05-18 | 1976-05-18 | Device and manufacture for mos-type semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5738776A JPS52140282A (en) | 1976-05-18 | 1976-05-18 | Device and manufacture for mos-type semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52140282A true JPS52140282A (en) | 1977-11-22 |
Family
ID=13054190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5738776A Pending JPS52140282A (en) | 1976-05-18 | 1976-05-18 | Device and manufacture for mos-type semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52140282A (en) |
-
1976
- 1976-05-18 JP JP5738776A patent/JPS52140282A/en active Pending
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