JPS52117579A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52117579A
JPS52117579A JP3549876A JP3549876A JPS52117579A JP S52117579 A JPS52117579 A JP S52117579A JP 3549876 A JP3549876 A JP 3549876A JP 3549876 A JP3549876 A JP 3549876A JP S52117579 A JPS52117579 A JP S52117579A
Authority
JP
Japan
Prior art keywords
electrode wiring
wiring film
semiconductor device
film
alignmently
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3549876A
Other languages
Japanese (ja)
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3549876A priority Critical patent/JPS52117579A/en
Publication of JPS52117579A publication Critical patent/JPS52117579A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enable high integration even with larger electrode wiring film sectional area, by forming the opening section such as base self-alignmently with the first electrode wiring film of multi-crystal Si, making the margin for the matching pitch unnecessary, and superimposing the first and second electrode wiring film thru insulating film.
JP3549876A 1976-03-30 1976-03-30 Semiconductor device Pending JPS52117579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3549876A JPS52117579A (en) 1976-03-30 1976-03-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3549876A JPS52117579A (en) 1976-03-30 1976-03-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52117579A true JPS52117579A (en) 1977-10-03

Family

ID=12443404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3549876A Pending JPS52117579A (en) 1976-03-30 1976-03-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52117579A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466076A (en) * 1977-10-25 1979-05-28 Ibm Semiconductor bipolar device
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS56129342A (en) * 1980-03-12 1981-10-09 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS56133864A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device and manufacture thereof
JPS56150850A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5728352A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor integrated circuit and manufacture thereof
JPS57143861A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62588B2 (en) * 1977-10-25 1987-01-08 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5466076A (en) * 1977-10-25 1979-05-28 Ibm Semiconductor bipolar device
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217385B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS6217384B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217386B2 (en) * 1979-12-21 1987-04-17 Tokyo Shibaura Electric Co
JPS56129342A (en) * 1980-03-12 1981-10-09 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0157506B2 (en) * 1980-03-12 1989-12-06 Mitsubishi Electric Corp
JPS56133864A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device and manufacture thereof
JPS56150850A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPH0222544B2 (en) * 1980-04-22 1990-05-18 Tokyo Shibaura Electric Co
JPS5728352A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor integrated circuit and manufacture thereof
JPS57143861A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of semiconductor device

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees