JPS53112686A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53112686A
JPS53112686A JP2698477A JP2698477A JPS53112686A JP S53112686 A JPS53112686 A JP S53112686A JP 2698477 A JP2698477 A JP 2698477A JP 2698477 A JP2698477 A JP 2698477A JP S53112686 A JPS53112686 A JP S53112686A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
make
constitution
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2698477A
Other languages
Japanese (ja)
Other versions
JPS6113388B2 (en
Inventor
Hiroshi Matsui
Hiroshi Onoda
Akihisa Aoki
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2698477A priority Critical patent/JPS53112686A/en
Publication of JPS53112686A publication Critical patent/JPS53112686A/en
Publication of JPS6113388B2 publication Critical patent/JPS6113388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To make high density for the semiconductor device of two layer polycrystal Si constitution and to make stable it, by using the SI3N4 film having the mask effect to oxidation and a large dielectric constant for the first gate insulating film.
JP2698477A 1977-03-14 1977-03-14 Manufacture for semiconductor device Granted JPS53112686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2698477A JPS53112686A (en) 1977-03-14 1977-03-14 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2698477A JPS53112686A (en) 1977-03-14 1977-03-14 Manufacture for semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58050464A Division JPS58175861A (en) 1983-03-28 1983-03-28 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS53112686A true JPS53112686A (en) 1978-10-02
JPS6113388B2 JPS6113388B2 (en) 1986-04-12

Family

ID=12208418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2698477A Granted JPS53112686A (en) 1977-03-14 1977-03-14 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53112686A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS57114272A (en) * 1981-01-06 1982-07-16 Nec Corp Semiconductor memory
JPS57186354A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory storage and manufacture thereof
JPH01152661A (en) * 1988-06-20 1989-06-15 Hitachi Ltd Semiconductor memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647615U (en) * 1987-06-30 1989-01-17

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS57114272A (en) * 1981-01-06 1982-07-16 Nec Corp Semiconductor memory
JPS57186354A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory storage and manufacture thereof
JPH01152661A (en) * 1988-06-20 1989-06-15 Hitachi Ltd Semiconductor memory
JPH0577342B2 (en) * 1988-06-20 1993-10-26 Hitachi Ltd

Also Published As

Publication number Publication date
JPS6113388B2 (en) 1986-04-12

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