JPS53125776A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53125776A
JPS53125776A JP4051777A JP4051777A JPS53125776A JP S53125776 A JPS53125776 A JP S53125776A JP 4051777 A JP4051777 A JP 4051777A JP 4051777 A JP4051777 A JP 4051777A JP S53125776 A JPS53125776 A JP S53125776A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
halogen
implantation
atomosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4051777A
Other languages
Japanese (ja)
Other versions
JPS6110993B2 (en
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4051777A priority Critical patent/JPS53125776A/en
Publication of JPS53125776A publication Critical patent/JPS53125776A/en
Publication of JPS6110993B2 publication Critical patent/JPS6110993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To enable to perform the implantation of crystal and the formation of insulating film with one process, by oxidizing a substrate under O2 atomosphere including halogen or hydrogen compound of halogen, after ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
JP4051777A 1977-04-08 1977-04-08 Manufacture for semiconductor device Granted JPS53125776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051777A JPS53125776A (en) 1977-04-08 1977-04-08 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051777A JPS53125776A (en) 1977-04-08 1977-04-08 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS53125776A true JPS53125776A (en) 1978-11-02
JPS6110993B2 JPS6110993B2 (en) 1986-04-01

Family

ID=12582699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051777A Granted JPS53125776A (en) 1977-04-08 1977-04-08 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53125776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077229A (en) * 1988-10-10 1991-12-31 Eniricerche S.P.A. Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61157194U (en) * 1985-03-20 1986-09-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077229A (en) * 1988-10-10 1991-12-31 Eniricerche S.P.A. Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same

Also Published As

Publication number Publication date
JPS6110993B2 (en) 1986-04-01

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