JPS5350670A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5350670A
JPS5350670A JP12574276A JP12574276A JPS5350670A JP S5350670 A JPS5350670 A JP S5350670A JP 12574276 A JP12574276 A JP 12574276A JP 12574276 A JP12574276 A JP 12574276A JP S5350670 A JPS5350670 A JP S5350670A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layers
controllabilty
anodization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12574276A
Other languages
Japanese (ja)
Other versions
JPS5917530B2 (en
Inventor
Kazutoshi Nagano
Tatsunori Nakajima
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51125742A priority Critical patent/JPS5917530B2/en
Publication of JPS5350670A publication Critical patent/JPS5350670A/en
Publication of JPS5917530B2 publication Critical patent/JPS5917530B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form impurity diffused layers with good controllabilty by providing porous Si layers on a substrate through anodization by using an electrolyte containing an impurity followed by heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP51125742A 1976-10-19 1976-10-19 Manufacturing method of semiconductor device Expired JPS5917530B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51125742A JPS5917530B2 (en) 1976-10-19 1976-10-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51125742A JPS5917530B2 (en) 1976-10-19 1976-10-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5350670A true JPS5350670A (en) 1978-05-09
JPS5917530B2 JPS5917530B2 (en) 1984-04-21

Family

ID=14917658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51125742A Expired JPS5917530B2 (en) 1976-10-19 1976-10-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5917530B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655193A1 (en) * 1989-11-30 1991-05-31 Telemecanique Symmetric power semi-conductor device and its method of fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152789A (en) * 1974-11-01 1976-05-10 Mitsubishi Electric Corp PUREENAGATAHANDOTAISOCHINO SEIZOHOHO
JPS5177066A (en) * 1974-12-27 1976-07-03 New Nippon Electric Co HANDOTAISOCHINOSEIZOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152789A (en) * 1974-11-01 1976-05-10 Mitsubishi Electric Corp PUREENAGATAHANDOTAISOCHINO SEIZOHOHO
JPS5177066A (en) * 1974-12-27 1976-07-03 New Nippon Electric Co HANDOTAISOCHINOSEIZOHOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655193A1 (en) * 1989-11-30 1991-05-31 Telemecanique Symmetric power semi-conductor device and its method of fabrication

Also Published As

Publication number Publication date
JPS5917530B2 (en) 1984-04-21

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