JPS5390784A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5390784A
JPS5390784A JP533277A JP533277A JPS5390784A JP S5390784 A JPS5390784 A JP S5390784A JP 533277 A JP533277 A JP 533277A JP 533277 A JP533277 A JP 533277A JP S5390784 A JPS5390784 A JP S5390784A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
oxide film
impurity
diffuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP533277A
Other languages
Japanese (ja)
Other versions
JPS5917845B2 (en
Inventor
Toshiyuki Kitahara
Masaru Kazumura
Ginjiro Kanbara
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52005332A priority Critical patent/JPS5917845B2/en
Publication of JPS5390784A publication Critical patent/JPS5390784A/en
Publication of JPS5917845B2 publication Critical patent/JPS5917845B2/en
Expired legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To increase the rate of impurity diffusion in oxide film and diffuse an impurity through the oxide film by heat-treating the semiconductor substrate formed with the oxide film on its surface in a hydrogen current.
COPYRIGHT: (C)1978,JPO&Japio
JP52005332A 1977-01-19 1977-01-19 Manufacturing method of semiconductor device Expired JPS5917845B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52005332A JPS5917845B2 (en) 1977-01-19 1977-01-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52005332A JPS5917845B2 (en) 1977-01-19 1977-01-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5390784A true JPS5390784A (en) 1978-08-09
JPS5917845B2 JPS5917845B2 (en) 1984-04-24

Family

ID=11608275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52005332A Expired JPS5917845B2 (en) 1977-01-19 1977-01-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5917845B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2101347A1 (en) * 2008-03-04 2009-09-16 KISCO Corporation Annealing method of zinc oxide thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2101347A1 (en) * 2008-03-04 2009-09-16 KISCO Corporation Annealing method of zinc oxide thin film
US8034656B2 (en) 2008-03-04 2011-10-11 Kisco Annealing method of zinc oxide thin film

Also Published As

Publication number Publication date
JPS5917845B2 (en) 1984-04-24

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