JPS52154344A - Impurity diffusion method - Google Patents
Impurity diffusion methodInfo
- Publication number
- JPS52154344A JPS52154344A JP7196576A JP7196576A JPS52154344A JP S52154344 A JPS52154344 A JP S52154344A JP 7196576 A JP7196576 A JP 7196576A JP 7196576 A JP7196576 A JP 7196576A JP S52154344 A JPS52154344 A JP S52154344A
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- diffusion method
- substrate
- film
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form a low concentration diffused layer on a substrate by heat-treating the substrate in a H2 or ammonia atmosphere and performing diffusion through the film containing impurities through SiO2 film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7196576A JPS5853500B2 (en) | 1976-06-17 | 1976-06-17 | Impurity diffusion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7196576A JPS5853500B2 (en) | 1976-06-17 | 1976-06-17 | Impurity diffusion method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52154344A true JPS52154344A (en) | 1977-12-22 |
JPS5853500B2 JPS5853500B2 (en) | 1983-11-29 |
Family
ID=13475683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7196576A Expired JPS5853500B2 (en) | 1976-06-17 | 1976-06-17 | Impurity diffusion method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5853500B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173440A (en) * | 1989-05-02 | 1992-12-22 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device by reducing the impurities |
WO2006072976A1 (en) * | 2005-01-05 | 2006-07-13 | Saga University | Semiconductor element manufacturing method |
-
1976
- 1976-06-17 JP JP7196576A patent/JPS5853500B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173440A (en) * | 1989-05-02 | 1992-12-22 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device by reducing the impurities |
WO2006072976A1 (en) * | 2005-01-05 | 2006-07-13 | Saga University | Semiconductor element manufacturing method |
JPWO2006072976A1 (en) * | 2005-01-05 | 2008-08-07 | 国立大学法人佐賀大学 | Semiconductor device manufacturing method |
JP5156945B2 (en) * | 2005-01-05 | 2013-03-06 | 国立大学法人佐賀大学 | Semiconductor device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS5853500B2 (en) | 1983-11-29 |
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