JPS52154344A - Impurity diffusion method - Google Patents

Impurity diffusion method

Info

Publication number
JPS52154344A
JPS52154344A JP7196576A JP7196576A JPS52154344A JP S52154344 A JPS52154344 A JP S52154344A JP 7196576 A JP7196576 A JP 7196576A JP 7196576 A JP7196576 A JP 7196576A JP S52154344 A JPS52154344 A JP S52154344A
Authority
JP
Japan
Prior art keywords
impurity diffusion
diffusion method
substrate
film
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7196576A
Other languages
Japanese (ja)
Other versions
JPS5853500B2 (en
Inventor
Yoshihiro Todokoro
Ginjiro Kanbara
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP7196576A priority Critical patent/JPS5853500B2/en
Publication of JPS52154344A publication Critical patent/JPS52154344A/en
Publication of JPS5853500B2 publication Critical patent/JPS5853500B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form a low concentration diffused layer on a substrate by heat-treating the substrate in a H2 or ammonia atmosphere and performing diffusion through the film containing impurities through SiO2 film.
COPYRIGHT: (C)1977,JPO&Japio
JP7196576A 1976-06-17 1976-06-17 Impurity diffusion method Expired JPS5853500B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7196576A JPS5853500B2 (en) 1976-06-17 1976-06-17 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7196576A JPS5853500B2 (en) 1976-06-17 1976-06-17 Impurity diffusion method

Publications (2)

Publication Number Publication Date
JPS52154344A true JPS52154344A (en) 1977-12-22
JPS5853500B2 JPS5853500B2 (en) 1983-11-29

Family

ID=13475683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7196576A Expired JPS5853500B2 (en) 1976-06-17 1976-06-17 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS5853500B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173440A (en) * 1989-05-02 1992-12-22 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device by reducing the impurities
WO2006072976A1 (en) * 2005-01-05 2006-07-13 Saga University Semiconductor element manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173440A (en) * 1989-05-02 1992-12-22 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device by reducing the impurities
WO2006072976A1 (en) * 2005-01-05 2006-07-13 Saga University Semiconductor element manufacturing method
JPWO2006072976A1 (en) * 2005-01-05 2008-08-07 国立大学法人佐賀大学 Semiconductor device manufacturing method
JP5156945B2 (en) * 2005-01-05 2013-03-06 国立大学法人佐賀大学 Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPS5853500B2 (en) 1983-11-29

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