JPS538073A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS538073A
JPS538073A JP8198376A JP8198376A JPS538073A JP S538073 A JPS538073 A JP S538073A JP 8198376 A JP8198376 A JP 8198376A JP 8198376 A JP8198376 A JP 8198376A JP S538073 A JPS538073 A JP S538073A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mis type
ions
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8198376A
Other languages
Japanese (ja)
Other versions
JPS6011473B2 (en
Inventor
Yuji Tanida
Shigeru Nishimatsu
Kikuji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8198376A priority Critical patent/JPS6011473B2/en
Publication of JPS538073A publication Critical patent/JPS538073A/en
Publication of JPS6011473B2 publication Critical patent/JPS6011473B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To prevent the deep diffusion of P ions into substrate and prevent contamination of ions belonging to Na as well by forming films such as Si3N4, alumina, low concentration PSG, etc. under a PSG film of a high concentration.
COPYRIGHT: (C)1978,JPO&Japio
JP8198376A 1976-07-12 1976-07-12 MIS type semiconductor device Expired JPS6011473B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8198376A JPS6011473B2 (en) 1976-07-12 1976-07-12 MIS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8198376A JPS6011473B2 (en) 1976-07-12 1976-07-12 MIS type semiconductor device

Publications (2)

Publication Number Publication Date
JPS538073A true JPS538073A (en) 1978-01-25
JPS6011473B2 JPS6011473B2 (en) 1985-03-26

Family

ID=13761705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8198376A Expired JPS6011473B2 (en) 1976-07-12 1976-07-12 MIS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6011473B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715700A (en) * 1980-06-26 1982-01-27 Manabu Fukuda Rotary perforation forming device
JPS59115571A (en) * 1982-12-23 1984-07-04 Yoshiro Odaka Method and device for collecting emitted light energy by lens
JPS62271694A (en) * 1986-05-16 1987-11-25 ユニチカ株式会社 Cutter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324874U (en) * 1986-07-31 1988-02-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715700A (en) * 1980-06-26 1982-01-27 Manabu Fukuda Rotary perforation forming device
JPS59115571A (en) * 1982-12-23 1984-07-04 Yoshiro Odaka Method and device for collecting emitted light energy by lens
JPS62271694A (en) * 1986-05-16 1987-11-25 ユニチカ株式会社 Cutter

Also Published As

Publication number Publication date
JPS6011473B2 (en) 1985-03-26

Similar Documents

Publication Publication Date Title
JPS5351970A (en) Manufacture for semiconductor substrate
JPS53108390A (en) Semiconductor device and its manufacture
JPS51127682A (en) Manufacturing process of semiconductor device
JPS52140280A (en) Semiconductor device
JPS51127681A (en) Manufacturing process of semiconductor device
JPS538073A (en) Mis type semiconductor device
JPS5253666A (en) Method of preventing impurity diffusion from doped oxide
JPS51136288A (en) Photo etching using non-crystalline carchogenide glass thin film
JPS531471A (en) Manufacture for semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS546793A (en) Photo detector of semiconductor
JPS5436182A (en) Manufacture for semiconductor device
JPS5242365A (en) Tool for semiconductors
JPS5336471A (en) Manufacture of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS53123678A (en) Manufacture of field effect semiconductor device of insulation gate type
JPS5413273A (en) Semiconductor device
JPS52104881A (en) Manufacture for semiconductor device
JPS52122479A (en) Etching solution of silicon
JPS5373990A (en) Semiconductor device
JPS5210676A (en) Semiconductor device
JPS5231690A (en) Productin method of semiconductor device
JPS5315086A (en) Semiconductor device
JPS5326681A (en) Manufact ure of semiconductor device
JPS52154344A (en) Impurity diffusion method