JPS53123678A - Manufacture of field effect semiconductor device of insulation gate type - Google Patents

Manufacture of field effect semiconductor device of insulation gate type

Info

Publication number
JPS53123678A
JPS53123678A JP3885877A JP3885877A JPS53123678A JP S53123678 A JPS53123678 A JP S53123678A JP 3885877 A JP3885877 A JP 3885877A JP 3885877 A JP3885877 A JP 3885877A JP S53123678 A JPS53123678 A JP S53123678A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
field effect
gate type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3885877A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3885877A priority Critical patent/JPS53123678A/en
Publication of JPS53123678A publication Critical patent/JPS53123678A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the despersion of characteristics by eliminating a difference in alignment in a photo resist process with the use of a hard-to-oxidize film in a diffusion producess of MOSFET.
COPYRIGHT: (C)1978,JPO&Japio
JP3885877A 1977-04-04 1977-04-04 Manufacture of field effect semiconductor device of insulation gate type Pending JPS53123678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3885877A JPS53123678A (en) 1977-04-04 1977-04-04 Manufacture of field effect semiconductor device of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3885877A JPS53123678A (en) 1977-04-04 1977-04-04 Manufacture of field effect semiconductor device of insulation gate type

Publications (1)

Publication Number Publication Date
JPS53123678A true JPS53123678A (en) 1978-10-28

Family

ID=12536889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3885877A Pending JPS53123678A (en) 1977-04-04 1977-04-04 Manufacture of field effect semiconductor device of insulation gate type

Country Status (1)

Country Link
JP (1) JPS53123678A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141758A (en) * 1979-04-23 1980-11-05 Philips Nv Method of fabricating insulated gate field effect transistor
JPS5685865A (en) * 1979-09-18 1981-07-13 Sony Corp Semiconductor device
CN112770898A (en) * 2018-10-05 2021-05-07 山内株式会社 Hot-pressing cushioning material and method for manufacturing hot-pressing cushioning material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141758A (en) * 1979-04-23 1980-11-05 Philips Nv Method of fabricating insulated gate field effect transistor
JPS5685865A (en) * 1979-09-18 1981-07-13 Sony Corp Semiconductor device
CN112770898A (en) * 2018-10-05 2021-05-07 山内株式会社 Hot-pressing cushioning material and method for manufacturing hot-pressing cushioning material

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