JPS524175A - Groups iii-v compounds semiconductor device - Google Patents

Groups iii-v compounds semiconductor device

Info

Publication number
JPS524175A
JPS524175A JP8001475A JP8001475A JPS524175A JP S524175 A JPS524175 A JP S524175A JP 8001475 A JP8001475 A JP 8001475A JP 8001475 A JP8001475 A JP 8001475A JP S524175 A JPS524175 A JP S524175A
Authority
JP
Japan
Prior art keywords
semiconductor device
groups iii
compounds semiconductor
compounds
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8001475A
Other languages
Japanese (ja)
Inventor
Tadahiko Mitsuyoshi
Yasutoshi Kurihara
Tetsuo Kosugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8001475A priority Critical patent/JPS524175A/en
Publication of JPS524175A publication Critical patent/JPS524175A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve the performance of the groups III-V compounds semiconductor device including Ga, by using a glass film including Ga as a passivation film.
COPYRIGHT: (C)1977,JPO&Japio
JP8001475A 1975-06-30 1975-06-30 Groups iii-v compounds semiconductor device Pending JPS524175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8001475A JPS524175A (en) 1975-06-30 1975-06-30 Groups iii-v compounds semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8001475A JPS524175A (en) 1975-06-30 1975-06-30 Groups iii-v compounds semiconductor device

Publications (1)

Publication Number Publication Date
JPS524175A true JPS524175A (en) 1977-01-13

Family

ID=13706450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8001475A Pending JPS524175A (en) 1975-06-30 1975-06-30 Groups iii-v compounds semiconductor device

Country Status (1)

Country Link
JP (1) JPS524175A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868985A (en) * 1981-10-20 1983-04-25 Matsushita Electric Ind Co Ltd Field-effect transistor and its manufacture
WO2003034508A1 (en) * 2001-10-12 2003-04-24 Nichia Corporation Light emitting device and method for manufacture thereof
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
WO2006112417A1 (en) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868985A (en) * 1981-10-20 1983-04-25 Matsushita Electric Ind Co Ltd Field-effect transistor and its manufacture
WO2003034508A1 (en) * 2001-10-12 2003-04-24 Nichia Corporation Light emitting device and method for manufacture thereof
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7390684B2 (en) 2001-10-12 2008-06-24 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
WO2006112417A1 (en) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those
US7872417B2 (en) 2005-04-15 2011-01-18 Asahi Glass Company, Limited Glass-sealed light emitting element, circuit board with the glass-sealed light emitting element, and methods for manufacturing those

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