JPS524175A - Groups iii-v compounds semiconductor device - Google Patents
Groups iii-v compounds semiconductor deviceInfo
- Publication number
- JPS524175A JPS524175A JP8001475A JP8001475A JPS524175A JP S524175 A JPS524175 A JP S524175A JP 8001475 A JP8001475 A JP 8001475A JP 8001475 A JP8001475 A JP 8001475A JP S524175 A JPS524175 A JP S524175A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- groups iii
- compounds semiconductor
- compounds
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve the performance of the groups III-V compounds semiconductor device including Ga, by using a glass film including Ga as a passivation film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8001475A JPS524175A (en) | 1975-06-30 | 1975-06-30 | Groups iii-v compounds semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8001475A JPS524175A (en) | 1975-06-30 | 1975-06-30 | Groups iii-v compounds semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS524175A true JPS524175A (en) | 1977-01-13 |
Family
ID=13706450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8001475A Pending JPS524175A (en) | 1975-06-30 | 1975-06-30 | Groups iii-v compounds semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS524175A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868985A (en) * | 1981-10-20 | 1983-04-25 | Matsushita Electric Ind Co Ltd | Field-effect transistor and its manufacture |
WO2003034508A1 (en) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Light emitting device and method for manufacture thereof |
US7105857B2 (en) | 2002-07-08 | 2006-09-12 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
WO2006112417A1 (en) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
-
1975
- 1975-06-30 JP JP8001475A patent/JPS524175A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868985A (en) * | 1981-10-20 | 1983-04-25 | Matsushita Electric Ind Co Ltd | Field-effect transistor and its manufacture |
WO2003034508A1 (en) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Light emitting device and method for manufacture thereof |
US7301175B2 (en) | 2001-10-12 | 2007-11-27 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
US7390684B2 (en) | 2001-10-12 | 2008-06-24 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
US7105857B2 (en) | 2002-07-08 | 2006-09-12 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
US7378334B2 (en) | 2002-07-08 | 2008-05-27 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
US8030665B2 (en) | 2002-07-08 | 2011-10-04 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
WO2006112417A1 (en) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
US7872417B2 (en) | 2005-04-15 | 2011-01-18 | Asahi Glass Company, Limited | Glass-sealed light emitting element, circuit board with the glass-sealed light emitting element, and methods for manufacturing those |
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