JPS5335383A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5335383A JPS5335383A JP11023476A JP11023476A JPS5335383A JP S5335383 A JPS5335383 A JP S5335383A JP 11023476 A JP11023476 A JP 11023476A JP 11023476 A JP11023476 A JP 11023476A JP S5335383 A JPS5335383 A JP S5335383A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- improve
- reproducibility
- distortion
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve adhesion at the interface, eliminate the introduction of distortion and improve the reproducibility as a mask by using a high resistance polycrystalline film as an insulation film of group III-V compound semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11023476A JPS5335383A (en) | 1976-09-13 | 1976-09-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11023476A JPS5335383A (en) | 1976-09-13 | 1976-09-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5335383A true JPS5335383A (en) | 1978-04-01 |
Family
ID=14530486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11023476A Pending JPS5335383A (en) | 1976-09-13 | 1976-09-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5335383A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5744081A (en) * | 1980-08-25 | 1982-03-12 | Koito Mfg Co Ltd | Lift |
US5037674A (en) * | 1985-05-29 | 1991-08-06 | The Furukawa Electric Co., Ltd. | Method of chemically vapor depositing a thin film of GaAs |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4836984A (en) * | 1971-09-11 | 1973-05-31 |
-
1976
- 1976-09-13 JP JP11023476A patent/JPS5335383A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4836984A (en) * | 1971-09-11 | 1973-05-31 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5744081A (en) * | 1980-08-25 | 1982-03-12 | Koito Mfg Co Ltd | Lift |
JPH0250277B2 (en) * | 1980-08-25 | 1990-11-01 | Koito Mfg Co Ltd | |
US5037674A (en) * | 1985-05-29 | 1991-08-06 | The Furukawa Electric Co., Ltd. | Method of chemically vapor depositing a thin film of GaAs |
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