JPS5335383A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5335383A
JPS5335383A JP11023476A JP11023476A JPS5335383A JP S5335383 A JPS5335383 A JP S5335383A JP 11023476 A JP11023476 A JP 11023476A JP 11023476 A JP11023476 A JP 11023476A JP S5335383 A JPS5335383 A JP S5335383A
Authority
JP
Japan
Prior art keywords
semiconductor device
improve
reproducibility
distortion
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11023476A
Other languages
Japanese (ja)
Inventor
Kunihiko Asahi
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11023476A priority Critical patent/JPS5335383A/en
Publication of JPS5335383A publication Critical patent/JPS5335383A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve adhesion at the interface, eliminate the introduction of distortion and improve the reproducibility as a mask by using a high resistance polycrystalline film as an insulation film of group III-V compound semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
JP11023476A 1976-09-13 1976-09-13 Semiconductor device Pending JPS5335383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11023476A JPS5335383A (en) 1976-09-13 1976-09-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11023476A JPS5335383A (en) 1976-09-13 1976-09-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5335383A true JPS5335383A (en) 1978-04-01

Family

ID=14530486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11023476A Pending JPS5335383A (en) 1976-09-13 1976-09-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5335383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744081A (en) * 1980-08-25 1982-03-12 Koito Mfg Co Ltd Lift
US5037674A (en) * 1985-05-29 1991-08-06 The Furukawa Electric Co., Ltd. Method of chemically vapor depositing a thin film of GaAs

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836984A (en) * 1971-09-11 1973-05-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836984A (en) * 1971-09-11 1973-05-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744081A (en) * 1980-08-25 1982-03-12 Koito Mfg Co Ltd Lift
JPH0250277B2 (en) * 1980-08-25 1990-11-01 Koito Mfg Co Ltd
US5037674A (en) * 1985-05-29 1991-08-06 The Furukawa Electric Co., Ltd. Method of chemically vapor depositing a thin film of GaAs

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