JPS52115667A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52115667A JPS52115667A JP3197676A JP3197676A JPS52115667A JP S52115667 A JPS52115667 A JP S52115667A JP 3197676 A JP3197676 A JP 3197676A JP 3197676 A JP3197676 A JP 3197676A JP S52115667 A JPS52115667 A JP S52115667A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- channel
- fet
- making
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce channel leakage current by making an n channel IG-FET in the Si single crystal film epitaxially grown on a sapphire substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3197676A JPS52115667A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3197676A JPS52115667A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52115667A true JPS52115667A (en) | 1977-09-28 |
JPS5541537B2 JPS5541537B2 (en) | 1980-10-24 |
Family
ID=12345968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3197676A Granted JPS52115667A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52115667A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541258B2 (en) | 2004-12-01 | 2009-06-02 | Seiko Epson Corporation | Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50141283A (en) * | 1974-04-22 | 1975-11-13 |
-
1976
- 1976-03-25 JP JP3197676A patent/JPS52115667A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50141283A (en) * | 1974-04-22 | 1975-11-13 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541258B2 (en) | 2004-12-01 | 2009-06-02 | Seiko Epson Corporation | Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5541537B2 (en) | 1980-10-24 |
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