JPS52115667A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52115667A
JPS52115667A JP3197676A JP3197676A JPS52115667A JP S52115667 A JPS52115667 A JP S52115667A JP 3197676 A JP3197676 A JP 3197676A JP 3197676 A JP3197676 A JP 3197676A JP S52115667 A JPS52115667 A JP S52115667A
Authority
JP
Japan
Prior art keywords
semiconductor device
channel
fet
making
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3197676A
Other languages
Japanese (ja)
Other versions
JPS5541537B2 (en
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3197676A priority Critical patent/JPS52115667A/en
Publication of JPS52115667A publication Critical patent/JPS52115667A/en
Publication of JPS5541537B2 publication Critical patent/JPS5541537B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To reduce channel leakage current by making an n channel IG-FET in the Si single crystal film epitaxially grown on a sapphire substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP3197676A 1976-03-25 1976-03-25 Semiconductor device Granted JPS52115667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3197676A JPS52115667A (en) 1976-03-25 1976-03-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3197676A JPS52115667A (en) 1976-03-25 1976-03-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52115667A true JPS52115667A (en) 1977-09-28
JPS5541537B2 JPS5541537B2 (en) 1980-10-24

Family

ID=12345968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3197676A Granted JPS52115667A (en) 1976-03-25 1976-03-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52115667A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541258B2 (en) 2004-12-01 2009-06-02 Seiko Epson Corporation Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141283A (en) * 1974-04-22 1975-11-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141283A (en) * 1974-04-22 1975-11-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541258B2 (en) 2004-12-01 2009-06-02 Seiko Epson Corporation Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5541537B2 (en) 1980-10-24

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