JPS5234667A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5234667A JPS5234667A JP4406276A JP4406276A JPS5234667A JP S5234667 A JPS5234667 A JP S5234667A JP 4406276 A JP4406276 A JP 4406276A JP 4406276 A JP4406276 A JP 4406276A JP S5234667 A JPS5234667 A JP S5234667A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- poly
- kinds
- crystal film
- impurity elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain diffusion treatment with high reproducibility, by using the poly-crystal film which contains more than two kinds of impurity elements, as a diffusion source.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4406276A JPS5234667A (en) | 1976-04-16 | 1976-04-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4406276A JPS5234667A (en) | 1976-04-16 | 1976-04-16 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8970171A Division JPS4855663A (en) | 1971-11-10 | 1971-11-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5234667A true JPS5234667A (en) | 1977-03-16 |
Family
ID=12681127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4406276A Pending JPS5234667A (en) | 1976-04-16 | 1976-04-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5234667A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01308900A (en) * | 1988-06-06 | 1989-12-13 | Canon Inc | Production of diamond semiconductor |
JPH0521710U (en) * | 1991-09-06 | 1993-03-23 | 俊江 金沢 | Sticky leather belt fixing means |
-
1976
- 1976-04-16 JP JP4406276A patent/JPS5234667A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01308900A (en) * | 1988-06-06 | 1989-12-13 | Canon Inc | Production of diamond semiconductor |
JPH0521710U (en) * | 1991-09-06 | 1993-03-23 | 俊江 金沢 | Sticky leather belt fixing means |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52140280A (en) | Semiconductor device | |
JPS5395571A (en) | Semiconductor device | |
JPS5247383A (en) | Semiconductor device | |
JPS5234667A (en) | Semiconductor device | |
JPS5338271A (en) | Semiconductor device | |
JPS524175A (en) | Groups iii-v compounds semiconductor device | |
JPS52127179A (en) | Manufacturing method of semiconductor device | |
JPS5228888A (en) | Emission semiconductor device | |
JPS5228868A (en) | Semiconductor device | |
JPS538072A (en) | Semiconductor device | |
JPS5252370A (en) | Fabrication of glass-sealed semiconductor device | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS53123678A (en) | Manufacture of field effect semiconductor device of insulation gate type | |
JPS5223357A (en) | Semiconductor photomodulator | |
JPS5311574A (en) | Production of semiconductor device | |
JPS5384690A (en) | Field effect transistor | |
JPS54586A (en) | Production of semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS53137679A (en) | Manufacture for mos type semiconductor device | |
JPS5217765A (en) | Method to diffuse arsenic in a silicone wafer | |
JPS5266372A (en) | Manufacture of silicon single crystal | |
JPS52154343A (en) | Production of semiconductor device | |
JPS52129275A (en) | Impurity diffusion method | |
JPS5255876A (en) | Production of semiconductor device | |
JPS53120387A (en) | Production of semiconductor device |