JPS5227354A - Impurity diffusion method for iii-v group compound semiconductor region - Google Patents

Impurity diffusion method for iii-v group compound semiconductor region

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Publication number
JPS5227354A
JPS5227354A JP10303475A JP10303475A JPS5227354A JP S5227354 A JPS5227354 A JP S5227354A JP 10303475 A JP10303475 A JP 10303475A JP 10303475 A JP10303475 A JP 10303475A JP S5227354 A JPS5227354 A JP S5227354A
Authority
JP
Japan
Prior art keywords
iii
compound semiconductor
semiconductor region
impurity diffusion
group compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10303475A
Other languages
Japanese (ja)
Inventor
Koji Nose
Yuichi Ono
Eiichi Adachi
Hiroki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10303475A priority Critical patent/JPS5227354A/en
Publication of JPS5227354A publication Critical patent/JPS5227354A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: ZnSs2 is used as diffusion source as well as closed tube system is applied, so that impurity is diffused with good control to III-V compound semiconductor and even PN-junction can be obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP10303475A 1975-08-27 1975-08-27 Impurity diffusion method for iii-v group compound semiconductor region Pending JPS5227354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10303475A JPS5227354A (en) 1975-08-27 1975-08-27 Impurity diffusion method for iii-v group compound semiconductor region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10303475A JPS5227354A (en) 1975-08-27 1975-08-27 Impurity diffusion method for iii-v group compound semiconductor region

Publications (1)

Publication Number Publication Date
JPS5227354A true JPS5227354A (en) 1977-03-01

Family

ID=14343364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10303475A Pending JPS5227354A (en) 1975-08-27 1975-08-27 Impurity diffusion method for iii-v group compound semiconductor region

Country Status (1)

Country Link
JP (1) JPS5227354A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397718A1 (en) * 1977-07-15 1979-02-09 Matsushita Electric Ind Co Ltd PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES
JPS61274321A (en) * 1985-05-29 1986-12-04 Sanken Electric Co Ltd Method for diffusing impurity into compound semiconductor
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844068A (en) * 1971-10-08 1973-06-25
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds
US3817798A (en) * 1971-11-19 1974-06-18 Ibm Method of forming integrated semiconductor devices with iii-v compounds

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844068A (en) * 1971-10-08 1973-06-25
US3817798A (en) * 1971-11-19 1974-06-18 Ibm Method of forming integrated semiconductor devices with iii-v compounds
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397718A1 (en) * 1977-07-15 1979-02-09 Matsushita Electric Ind Co Ltd PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES
JPS61274321A (en) * 1985-05-29 1986-12-04 Sanken Electric Co Ltd Method for diffusing impurity into compound semiconductor
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display
US6471879B2 (en) 1999-09-01 2002-10-29 Micron Technology, Inc. Buffer layer in flat panel display
US7247227B2 (en) 1999-09-01 2007-07-24 Micron Technology, Inc. Buffer layer in flat panel display

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