JPS5227354A - Impurity diffusion method for iii-v group compound semiconductor region - Google Patents
Impurity diffusion method for iii-v group compound semiconductor regionInfo
- Publication number
- JPS5227354A JPS5227354A JP10303475A JP10303475A JPS5227354A JP S5227354 A JPS5227354 A JP S5227354A JP 10303475 A JP10303475 A JP 10303475A JP 10303475 A JP10303475 A JP 10303475A JP S5227354 A JPS5227354 A JP S5227354A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- compound semiconductor
- semiconductor region
- impurity diffusion
- group compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: ZnSs2 is used as diffusion source as well as closed tube system is applied, so that impurity is diffused with good control to III-V compound semiconductor and even PN-junction can be obtained.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10303475A JPS5227354A (en) | 1975-08-27 | 1975-08-27 | Impurity diffusion method for iii-v group compound semiconductor region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10303475A JPS5227354A (en) | 1975-08-27 | 1975-08-27 | Impurity diffusion method for iii-v group compound semiconductor region |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5227354A true JPS5227354A (en) | 1977-03-01 |
Family
ID=14343364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10303475A Pending JPS5227354A (en) | 1975-08-27 | 1975-08-27 | Impurity diffusion method for iii-v group compound semiconductor region |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5227354A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2397718A1 (en) * | 1977-07-15 | 1979-02-09 | Matsushita Electric Ind Co Ltd | PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES |
JPS61274321A (en) * | 1985-05-29 | 1986-12-04 | Sanken Electric Co Ltd | Method for diffusing impurity into compound semiconductor |
US6322712B1 (en) | 1999-09-01 | 2001-11-27 | Micron Technology, Inc. | Buffer layer in flat panel display |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4844068A (en) * | 1971-10-08 | 1973-06-25 | ||
US3764414A (en) * | 1972-05-01 | 1973-10-09 | Ibm | Open tube diffusion in iii-v compunds |
US3817798A (en) * | 1971-11-19 | 1974-06-18 | Ibm | Method of forming integrated semiconductor devices with iii-v compounds |
-
1975
- 1975-08-27 JP JP10303475A patent/JPS5227354A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4844068A (en) * | 1971-10-08 | 1973-06-25 | ||
US3817798A (en) * | 1971-11-19 | 1974-06-18 | Ibm | Method of forming integrated semiconductor devices with iii-v compounds |
US3764414A (en) * | 1972-05-01 | 1973-10-09 | Ibm | Open tube diffusion in iii-v compunds |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2397718A1 (en) * | 1977-07-15 | 1979-02-09 | Matsushita Electric Ind Co Ltd | PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES |
JPS61274321A (en) * | 1985-05-29 | 1986-12-04 | Sanken Electric Co Ltd | Method for diffusing impurity into compound semiconductor |
US6322712B1 (en) | 1999-09-01 | 2001-11-27 | Micron Technology, Inc. | Buffer layer in flat panel display |
US6471879B2 (en) | 1999-09-01 | 2002-10-29 | Micron Technology, Inc. | Buffer layer in flat panel display |
US7247227B2 (en) | 1999-09-01 | 2007-07-24 | Micron Technology, Inc. | Buffer layer in flat panel display |
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