JPS5275265A - Method of diffusing impurity to semiconductor - Google Patents

Method of diffusing impurity to semiconductor

Info

Publication number
JPS5275265A
JPS5275265A JP15265975A JP15265975A JPS5275265A JP S5275265 A JPS5275265 A JP S5275265A JP 15265975 A JP15265975 A JP 15265975A JP 15265975 A JP15265975 A JP 15265975A JP S5275265 A JPS5275265 A JP S5275265A
Authority
JP
Japan
Prior art keywords
semiconductor
diffusing impurity
diffusing
impurity
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15265975A
Other languages
Japanese (ja)
Other versions
JPS5814740B2 (en
Inventor
Ginjiro Kanbara
Susumu Furuike
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50152659A priority Critical patent/JPS5814740B2/en
Priority to US05/751,124 priority patent/US4102715A/en
Priority to DE2657415A priority patent/DE2657415C2/en
Priority to FR7638415A priority patent/FR2335950A1/en
Priority to GB53080/76A priority patent/GB1581726A/en
Publication of JPS5275265A publication Critical patent/JPS5275265A/en
Publication of JPS5814740B2 publication Critical patent/JPS5814740B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To perform diffusion over a wide concentration range with good controllability by using method of heat-treating an SiO2 film containing a group III element in an atmosphere containing NH3.
COPYRIGHT: (C)1977,JPO&Japio
JP50152659A 1975-12-19 1975-12-19 handout Expired JPS5814740B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP50152659A JPS5814740B2 (en) 1975-12-19 1975-12-19 handout
US05/751,124 US4102715A (en) 1975-12-19 1976-12-16 Method for diffusing an impurity into a semiconductor body
DE2657415A DE2657415C2 (en) 1975-12-19 1976-12-17 Method for diffusing foreign matter into a semiconductor substrate
FR7638415A FR2335950A1 (en) 1975-12-19 1976-12-20 PROCESS FOR CARRYING OUT THE DIFFUSION OF AN IMPURITY IN A SEMICONDUCTOR BODY
GB53080/76A GB1581726A (en) 1975-12-19 1976-12-20 Method for diffusing an impurity into a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50152659A JPS5814740B2 (en) 1975-12-19 1975-12-19 handout

Publications (2)

Publication Number Publication Date
JPS5275265A true JPS5275265A (en) 1977-06-24
JPS5814740B2 JPS5814740B2 (en) 1983-03-22

Family

ID=15545261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50152659A Expired JPS5814740B2 (en) 1975-12-19 1975-12-19 handout

Country Status (1)

Country Link
JP (1) JPS5814740B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152668A (en) * 1974-04-30 1975-12-08
JPS5246762A (en) * 1975-10-09 1977-04-13 Matsushita Electronics Corp Method of boron diffusion of silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152668A (en) * 1974-04-30 1975-12-08
JPS5246762A (en) * 1975-10-09 1977-04-13 Matsushita Electronics Corp Method of boron diffusion of silicon

Also Published As

Publication number Publication date
JPS5814740B2 (en) 1983-03-22

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