JPS5354972A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5354972A JPS5354972A JP13066376A JP13066376A JPS5354972A JP S5354972 A JPS5354972 A JP S5354972A JP 13066376 A JP13066376 A JP 13066376A JP 13066376 A JP13066376 A JP 13066376A JP S5354972 A JPS5354972 A JP S5354972A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- semiconductoe
- atmosphere
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To produce a thin and uniform thermal oxide film on a compound semiconductoe by treating a GaAs substrate at 550 to 600°C in an atmosphere of O2 or mixed gas of OW and inert gas.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13066376A JPS5354972A (en) | 1976-10-29 | 1976-10-29 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13066376A JPS5354972A (en) | 1976-10-29 | 1976-10-29 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5354972A true JPS5354972A (en) | 1978-05-18 |
Family
ID=15039625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13066376A Pending JPS5354972A (en) | 1976-10-29 | 1976-10-29 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5354972A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492415A (en) * | 1990-08-07 | 1992-03-25 | Sumitomo Electric Ind Ltd | Gaas wafer and manufacture thereof, and ion implantation to gaas wafer |
JP2013165262A (en) * | 2012-01-13 | 2013-08-22 | Sumitomo Electric Ind Ltd | Optical semiconductor element manufacturing method |
-
1976
- 1976-10-29 JP JP13066376A patent/JPS5354972A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492415A (en) * | 1990-08-07 | 1992-03-25 | Sumitomo Electric Ind Ltd | Gaas wafer and manufacture thereof, and ion implantation to gaas wafer |
JP2013165262A (en) * | 2012-01-13 | 2013-08-22 | Sumitomo Electric Ind Ltd | Optical semiconductor element manufacturing method |
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