JPS5275273A - Method of forming boron nitride-boron oxidesilicon oxide mixed film - Google Patents

Method of forming boron nitride-boron oxidesilicon oxide mixed film

Info

Publication number
JPS5275273A
JPS5275273A JP15266075A JP15266075A JPS5275273A JP S5275273 A JPS5275273 A JP S5275273A JP 15266075 A JP15266075 A JP 15266075A JP 15266075 A JP15266075 A JP 15266075A JP S5275273 A JPS5275273 A JP S5275273A
Authority
JP
Japan
Prior art keywords
boron
oxidesilicon
forming
mixed film
oxide mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15266075A
Other languages
Japanese (ja)
Other versions
JPS5750052B2 (en
Inventor
Ginjiro Kanbara
Susumu Furuike
Toshio Matsuda
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15266075A priority Critical patent/JPS5750052B2/ja
Priority claimed from US05/751,124 external-priority patent/US4102715A/en
Publication of JPS5275273A publication Critical patent/JPS5275273A/en
Publication of JPS5750052B2 publication Critical patent/JPS5750052B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To readily form a boron-diffused region of a low concentration by forming a boron nitride-boron oxide-silicon oxide film on a substrate surface and subjecting the substrate to ammonia treatment.
COPYRIGHT: (C)1977,JPO&Japio
JP15266075A 1975-12-19 1975-12-19 Expired JPS5750052B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15266075A JPS5750052B2 (en) 1975-12-19 1975-12-19

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP15266075A JPS5750052B2 (en) 1975-12-19 1975-12-19
US05/751,124 US4102715A (en) 1975-12-19 1976-12-16 Method for diffusing an impurity into a semiconductor body
DE2657415A DE2657415C2 (en) 1975-12-19 1976-12-17 Method for diffusing foreign matter into a semiconductor substrate
FR7638415A FR2335950B1 (en) 1975-12-19 1976-12-20
GB53080/76A GB1581726A (en) 1975-12-19 1976-12-20 Method for diffusing an impurity into a semiconductor body

Publications (2)

Publication Number Publication Date
JPS5275273A true JPS5275273A (en) 1977-06-24
JPS5750052B2 JPS5750052B2 (en) 1982-10-25

Family

ID=15545285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15266075A Expired JPS5750052B2 (en) 1975-12-19 1975-12-19

Country Status (1)

Country Link
JP (1) JPS5750052B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04165623A (en) * 1990-10-30 1992-06-11 Nec Corp Method of forming silicon boron nitride film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04165623A (en) * 1990-10-30 1992-06-11 Nec Corp Method of forming silicon boron nitride film

Also Published As

Publication number Publication date
JPS5750052B2 (en) 1982-10-25

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