JPS5351964A - Selective growth method for semiconductor crystal - Google Patents
Selective growth method for semiconductor crystalInfo
- Publication number
- JPS5351964A JPS5351964A JP12705576A JP12705576A JPS5351964A JP S5351964 A JPS5351964 A JP S5351964A JP 12705576 A JP12705576 A JP 12705576A JP 12705576 A JP12705576 A JP 12705576A JP S5351964 A JPS5351964 A JP S5351964A
- Authority
- JP
- Japan
- Prior art keywords
- selective growth
- semiconductor crystal
- growth method
- melting point
- metallic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To easily obtain the selective growth layer with a good uniformity, by making crystal growth thru the provision of the low melting point metallic layer and high melting point metallic layer on the substrate of chemical semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51127055A JPS5821820B2 (en) | 1976-10-21 | 1976-10-21 | Selective growth method for semiconductor crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51127055A JPS5821820B2 (en) | 1976-10-21 | 1976-10-21 | Selective growth method for semiconductor crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5351964A true JPS5351964A (en) | 1978-05-11 |
JPS5821820B2 JPS5821820B2 (en) | 1983-05-04 |
Family
ID=14950473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51127055A Expired JPS5821820B2 (en) | 1976-10-21 | 1976-10-21 | Selective growth method for semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5821820B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203963A (en) * | 2000-12-28 | 2002-07-19 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340820A (en) * | 1986-08-06 | 1988-02-22 | Olympia Kogyo Kk | Flow rate detector |
GB2205947B (en) * | 1987-06-19 | 1991-09-04 | British Gas Plc | Flowmeter |
-
1976
- 1976-10-21 JP JP51127055A patent/JPS5821820B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203963A (en) * | 2000-12-28 | 2002-07-19 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5821820B2 (en) | 1983-05-04 |
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