JPS5282087A - Production of solar cell - Google Patents

Production of solar cell

Info

Publication number
JPS5282087A
JPS5282087A JP6420676A JP6420676A JPS5282087A JP S5282087 A JPS5282087 A JP S5282087A JP 6420676 A JP6420676 A JP 6420676A JP 6420676 A JP6420676 A JP 6420676A JP S5282087 A JPS5282087 A JP S5282087A
Authority
JP
Japan
Prior art keywords
solar cell
production
substrate
junction
separating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6420676A
Other languages
Japanese (ja)
Inventor
Hiroshi Harigai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP6420676A priority Critical patent/JPS5282087A/en
Publication of JPS5282087A publication Critical patent/JPS5282087A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

PURPOSE: To produce an Si solar cell of a low cost by forming a pn junction through epitaxial growth on an Si single crystal substrate and separating this thin epitaxial layer from the substrate by electrolytic etching.
COPYRIGHT: (C)1977,JPO&Japio
JP6420676A 1976-06-02 1976-06-02 Production of solar cell Pending JPS5282087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6420676A JPS5282087A (en) 1976-06-02 1976-06-02 Production of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6420676A JPS5282087A (en) 1976-06-02 1976-06-02 Production of solar cell

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50156763A Division JPS5280776A (en) 1975-12-27 1975-12-27 Preparation of thin film silicon single crystal plate

Publications (1)

Publication Number Publication Date
JPS5282087A true JPS5282087A (en) 1977-07-08

Family

ID=13251359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6420676A Pending JPS5282087A (en) 1976-06-02 1976-06-02 Production of solar cell

Country Status (1)

Country Link
JP (1) JPS5282087A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559784A (en) * 1978-10-23 1980-05-06 Hezel Rudolf Soalr battery
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device
CN110137307A (en) * 2019-05-13 2019-08-16 浙江贝盛光伏股份有限公司 A kind of high uniformity shallow junction diffusion technique under environment under low pressure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559784A (en) * 1978-10-23 1980-05-06 Hezel Rudolf Soalr battery
JPH0147025B2 (en) * 1978-10-23 1989-10-12 Nukem Gmbh
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device
CN110137307A (en) * 2019-05-13 2019-08-16 浙江贝盛光伏股份有限公司 A kind of high uniformity shallow junction diffusion technique under environment under low pressure
CN110137307B (en) * 2019-05-13 2021-10-22 浙江贝盛光伏股份有限公司 High-uniformity shallow junction diffusion process in low-pressure environment

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