JPS5336182A - Thin semiconductor single crystal film forming insulation substrate - Google Patents

Thin semiconductor single crystal film forming insulation substrate

Info

Publication number
JPS5336182A
JPS5336182A JP10995776A JP10995776A JPS5336182A JP S5336182 A JPS5336182 A JP S5336182A JP 10995776 A JP10995776 A JP 10995776A JP 10995776 A JP10995776 A JP 10995776A JP S5336182 A JPS5336182 A JP S5336182A
Authority
JP
Japan
Prior art keywords
single crystal
film forming
crystal film
semiconductor single
insulation substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10995776A
Other languages
Japanese (ja)
Inventor
Takashi Nishida
Tatsumi Mizutani
Kazuyoshi Ueki
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10995776A priority Critical patent/JPS5336182A/en
Publication of JPS5336182A publication Critical patent/JPS5336182A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To suppress the production of distortion of grown layer and facilitate dicing of elements after element forming by depositing a film such as of α-Al2O3 of 0.5 to 20μm in thickness on a Si single crystal substrate and epitaxially growing a specified semiconductor material through this thin film.
COPYRIGHT: (C)1978,JPO&Japio
JP10995776A 1976-09-16 1976-09-16 Thin semiconductor single crystal film forming insulation substrate Pending JPS5336182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995776A JPS5336182A (en) 1976-09-16 1976-09-16 Thin semiconductor single crystal film forming insulation substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995776A JPS5336182A (en) 1976-09-16 1976-09-16 Thin semiconductor single crystal film forming insulation substrate

Publications (1)

Publication Number Publication Date
JPS5336182A true JPS5336182A (en) 1978-04-04

Family

ID=14523411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995776A Pending JPS5336182A (en) 1976-09-16 1976-09-16 Thin semiconductor single crystal film forming insulation substrate

Country Status (1)

Country Link
JP (1) JPS5336182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111999A (en) * 1982-12-16 1984-06-28 Nec Corp Heat treatment of insulating film of single crystal
JPH01199642A (en) * 1988-02-03 1989-08-11 Shin Nippon Giken Kogyo Kk Far infrared irradiation device for fluid
US7264231B2 (en) 2003-10-29 2007-09-04 Anemos Company Ltd. Diffused gas aeration apparatus
US9809676B2 (en) 2012-10-23 2017-11-07 Yazaki Corporation Automotive injection-molded product

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111999A (en) * 1982-12-16 1984-06-28 Nec Corp Heat treatment of insulating film of single crystal
JPH049760B2 (en) * 1982-12-16 1992-02-21
JPH01199642A (en) * 1988-02-03 1989-08-11 Shin Nippon Giken Kogyo Kk Far infrared irradiation device for fluid
US7264231B2 (en) 2003-10-29 2007-09-04 Anemos Company Ltd. Diffused gas aeration apparatus
EP2095869A2 (en) 2003-10-29 2009-09-02 Anemos Company Ltd. Air diffusing device
US9809676B2 (en) 2012-10-23 2017-11-07 Yazaki Corporation Automotive injection-molded product

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