JPS5336182A - Thin semiconductor single crystal film forming insulation substrate - Google Patents
Thin semiconductor single crystal film forming insulation substrateInfo
- Publication number
- JPS5336182A JPS5336182A JP10995776A JP10995776A JPS5336182A JP S5336182 A JPS5336182 A JP S5336182A JP 10995776 A JP10995776 A JP 10995776A JP 10995776 A JP10995776 A JP 10995776A JP S5336182 A JPS5336182 A JP S5336182A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film forming
- crystal film
- semiconductor single
- insulation substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To suppress the production of distortion of grown layer and facilitate dicing of elements after element forming by depositing a film such as of α-Al2O3 of 0.5 to 20μm in thickness on a Si single crystal substrate and epitaxially growing a specified semiconductor material through this thin film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10995776A JPS5336182A (en) | 1976-09-16 | 1976-09-16 | Thin semiconductor single crystal film forming insulation substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10995776A JPS5336182A (en) | 1976-09-16 | 1976-09-16 | Thin semiconductor single crystal film forming insulation substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5336182A true JPS5336182A (en) | 1978-04-04 |
Family
ID=14523411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10995776A Pending JPS5336182A (en) | 1976-09-16 | 1976-09-16 | Thin semiconductor single crystal film forming insulation substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5336182A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59111999A (en) * | 1982-12-16 | 1984-06-28 | Nec Corp | Heat treatment of insulating film of single crystal |
JPH01199642A (en) * | 1988-02-03 | 1989-08-11 | Shin Nippon Giken Kogyo Kk | Far infrared irradiation device for fluid |
US7264231B2 (en) | 2003-10-29 | 2007-09-04 | Anemos Company Ltd. | Diffused gas aeration apparatus |
US9809676B2 (en) | 2012-10-23 | 2017-11-07 | Yazaki Corporation | Automotive injection-molded product |
-
1976
- 1976-09-16 JP JP10995776A patent/JPS5336182A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59111999A (en) * | 1982-12-16 | 1984-06-28 | Nec Corp | Heat treatment of insulating film of single crystal |
JPH049760B2 (en) * | 1982-12-16 | 1992-02-21 | ||
JPH01199642A (en) * | 1988-02-03 | 1989-08-11 | Shin Nippon Giken Kogyo Kk | Far infrared irradiation device for fluid |
US7264231B2 (en) | 2003-10-29 | 2007-09-04 | Anemos Company Ltd. | Diffused gas aeration apparatus |
EP2095869A2 (en) | 2003-10-29 | 2009-09-02 | Anemos Company Ltd. | Air diffusing device |
US9809676B2 (en) | 2012-10-23 | 2017-11-07 | Yazaki Corporation | Automotive injection-molded product |
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