JPS5247673A - Process for production of silicon crystal film - Google Patents

Process for production of silicon crystal film

Info

Publication number
JPS5247673A
JPS5247673A JP12331375A JP12331375A JPS5247673A JP S5247673 A JPS5247673 A JP S5247673A JP 12331375 A JP12331375 A JP 12331375A JP 12331375 A JP12331375 A JP 12331375A JP S5247673 A JPS5247673 A JP S5247673A
Authority
JP
Japan
Prior art keywords
film
production
crystal film
silicon crystal
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12331375A
Other languages
Japanese (ja)
Other versions
JPS6046539B2 (en
Inventor
Tadashi Saito
Nobuo Kodera
Shigekazu Minagawa
Takashi Tokuyama
Takao Miyazaki
Haruo Ito
Hiroshi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12331375A priority Critical patent/JPS6046539B2/en
Publication of JPS5247673A publication Critical patent/JPS5247673A/en
Publication of JPS6046539B2 publication Critical patent/JPS6046539B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To prevent coagulation of a polycrystalline Si film owing to the surface tension at its melting by providing a protecting film on the Si film and make a semiconductor film by forming a polycrystalline Si film on an inexpensive substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP12331375A 1975-10-15 1975-10-15 Method for manufacturing silicon crystal film Expired JPS6046539B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12331375A JPS6046539B2 (en) 1975-10-15 1975-10-15 Method for manufacturing silicon crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12331375A JPS6046539B2 (en) 1975-10-15 1975-10-15 Method for manufacturing silicon crystal film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP14245885A Division JPS6175513A (en) 1985-07-01 1985-07-01 Manufacture of silicon crystal film

Publications (2)

Publication Number Publication Date
JPS5247673A true JPS5247673A (en) 1977-04-15
JPS6046539B2 JPS6046539B2 (en) 1985-10-16

Family

ID=14857448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12331375A Expired JPS6046539B2 (en) 1975-10-15 1975-10-15 Method for manufacturing silicon crystal film

Country Status (1)

Country Link
JP (1) JPS6046539B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111270A (en) * 1980-02-06 1981-09-02 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS57113217A (en) * 1980-12-29 1982-07-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5812320A (en) * 1981-07-15 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS58112333A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Manufacture of semiconductor device
JPS60102728A (en) * 1983-11-09 1985-06-06 Hitachi Ltd Manufacture of semiconductor substrate
JPS6126211A (en) * 1984-07-16 1986-02-05 Agency Of Ind Science & Technol Crystal growth of semiconductor
JPS62199012A (en) * 1986-02-27 1987-09-02 Agency Of Ind Science & Technol Recrystallization of thin film
US4835061A (en) * 1984-11-09 1989-05-30 Konishiroku Photo Industry Co., Ltd. Conductive laminate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111270A (en) * 1980-02-06 1981-09-02 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS57113217A (en) * 1980-12-29 1982-07-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0334647B2 (en) * 1980-12-29 1991-05-23 Matsushita Electric Ind Co Ltd
JPS5812320A (en) * 1981-07-15 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS58112333A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Manufacture of semiconductor device
JPH0337732B2 (en) * 1981-12-26 1991-06-06 Fujitsu Ltd
JPS60102728A (en) * 1983-11-09 1985-06-06 Hitachi Ltd Manufacture of semiconductor substrate
JPS6126211A (en) * 1984-07-16 1986-02-05 Agency Of Ind Science & Technol Crystal growth of semiconductor
US4835061A (en) * 1984-11-09 1989-05-30 Konishiroku Photo Industry Co., Ltd. Conductive laminate
JPS62199012A (en) * 1986-02-27 1987-09-02 Agency Of Ind Science & Technol Recrystallization of thin film

Also Published As

Publication number Publication date
JPS6046539B2 (en) 1985-10-16

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