JPS5247673A - Process for production of silicon crystal film - Google Patents
Process for production of silicon crystal filmInfo
- Publication number
- JPS5247673A JPS5247673A JP12331375A JP12331375A JPS5247673A JP S5247673 A JPS5247673 A JP S5247673A JP 12331375 A JP12331375 A JP 12331375A JP 12331375 A JP12331375 A JP 12331375A JP S5247673 A JPS5247673 A JP S5247673A
- Authority
- JP
- Japan
- Prior art keywords
- film
- production
- crystal film
- silicon crystal
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To prevent coagulation of a polycrystalline Si film owing to the surface tension at its melting by providing a protecting film on the Si film and make a semiconductor film by forming a polycrystalline Si film on an inexpensive substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12331375A JPS6046539B2 (en) | 1975-10-15 | 1975-10-15 | Method for manufacturing silicon crystal film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12331375A JPS6046539B2 (en) | 1975-10-15 | 1975-10-15 | Method for manufacturing silicon crystal film |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14245885A Division JPS6175513A (en) | 1985-07-01 | 1985-07-01 | Manufacture of silicon crystal film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5247673A true JPS5247673A (en) | 1977-04-15 |
JPS6046539B2 JPS6046539B2 (en) | 1985-10-16 |
Family
ID=14857448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12331375A Expired JPS6046539B2 (en) | 1975-10-15 | 1975-10-15 | Method for manufacturing silicon crystal film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6046539B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111270A (en) * | 1980-02-06 | 1981-09-02 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPS57113217A (en) * | 1980-12-29 | 1982-07-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5812320A (en) * | 1981-07-15 | 1983-01-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58112333A (en) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60102728A (en) * | 1983-11-09 | 1985-06-06 | Hitachi Ltd | Manufacture of semiconductor substrate |
JPS6126211A (en) * | 1984-07-16 | 1986-02-05 | Agency Of Ind Science & Technol | Crystal growth of semiconductor |
JPS62199012A (en) * | 1986-02-27 | 1987-09-02 | Agency Of Ind Science & Technol | Recrystallization of thin film |
US4835061A (en) * | 1984-11-09 | 1989-05-30 | Konishiroku Photo Industry Co., Ltd. | Conductive laminate |
-
1975
- 1975-10-15 JP JP12331375A patent/JPS6046539B2/en not_active Expired
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111270A (en) * | 1980-02-06 | 1981-09-02 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPS57113217A (en) * | 1980-12-29 | 1982-07-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0334647B2 (en) * | 1980-12-29 | 1991-05-23 | Matsushita Electric Ind Co Ltd | |
JPS5812320A (en) * | 1981-07-15 | 1983-01-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58112333A (en) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0337732B2 (en) * | 1981-12-26 | 1991-06-06 | Fujitsu Ltd | |
JPS60102728A (en) * | 1983-11-09 | 1985-06-06 | Hitachi Ltd | Manufacture of semiconductor substrate |
JPS6126211A (en) * | 1984-07-16 | 1986-02-05 | Agency Of Ind Science & Technol | Crystal growth of semiconductor |
US4835061A (en) * | 1984-11-09 | 1989-05-30 | Konishiroku Photo Industry Co., Ltd. | Conductive laminate |
JPS62199012A (en) * | 1986-02-27 | 1987-09-02 | Agency Of Ind Science & Technol | Recrystallization of thin film |
Also Published As
Publication number | Publication date |
---|---|
JPS6046539B2 (en) | 1985-10-16 |
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