JPS542657A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS542657A JPS542657A JP6823677A JP6823677A JPS542657A JP S542657 A JPS542657 A JP S542657A JP 6823677 A JP6823677 A JP 6823677A JP 6823677 A JP6823677 A JP 6823677A JP S542657 A JPS542657 A JP S542657A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- main surface
- semiconductor
- influence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the influence of a crystal defect induced in a manufacture process, by adhering poly Si or Si3 N4 film to the 2nd main surface opposite to the 1st main surface where the function regions of a semiconductor are mainly formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6823677A JPS542657A (en) | 1977-06-08 | 1977-06-08 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6823677A JPS542657A (en) | 1977-06-08 | 1977-06-08 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS542657A true JPS542657A (en) | 1979-01-10 |
Family
ID=13367942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6823677A Pending JPS542657A (en) | 1977-06-08 | 1977-06-08 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS542657A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5762538A (en) * | 1980-10-01 | 1982-04-15 | Nec Corp | Manufacture of semiconductor device |
US5189508A (en) * | 1988-03-30 | 1993-02-23 | Nippon Steel Corporation | Silicon wafer excelling in gettering ability and method for production thereof |
US5478758A (en) * | 1994-06-03 | 1995-12-26 | At&T Corp. | Method of making a getterer for multi-layer wafers |
US5892292A (en) * | 1994-06-03 | 1999-04-06 | Lucent Technologies Inc. | Getterer for multi-layer wafers and method for making same |
-
1977
- 1977-06-08 JP JP6823677A patent/JPS542657A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5762538A (en) * | 1980-10-01 | 1982-04-15 | Nec Corp | Manufacture of semiconductor device |
JPS613090B2 (en) * | 1980-10-01 | 1986-01-30 | Nippon Electric Co | |
US5189508A (en) * | 1988-03-30 | 1993-02-23 | Nippon Steel Corporation | Silicon wafer excelling in gettering ability and method for production thereof |
US5478758A (en) * | 1994-06-03 | 1995-12-26 | At&T Corp. | Method of making a getterer for multi-layer wafers |
US5892292A (en) * | 1994-06-03 | 1999-04-06 | Lucent Technologies Inc. | Getterer for multi-layer wafers and method for making same |
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