JPS5762538A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5762538A
JPS5762538A JP13747480A JP13747480A JPS5762538A JP S5762538 A JPS5762538 A JP S5762538A JP 13747480 A JP13747480 A JP 13747480A JP 13747480 A JP13747480 A JP 13747480A JP S5762538 A JPS5762538 A JP S5762538A
Authority
JP
Japan
Prior art keywords
film
nitrided silicon
silicon film
back surface
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13747480A
Other languages
Japanese (ja)
Other versions
JPS613090B2 (en
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13747480A priority Critical patent/JPS5762538A/en
Publication of JPS5762538A publication Critical patent/JPS5762538A/en
Publication of JPS613090B2 publication Critical patent/JPS613090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Abstract

PURPOSE:To improve the characteristics of a semiconductor device by forming a defective layer in a nitrided silicon film formed on the back surface of a semiconductor substrate and not eliminating the nitrided silicon film until the final treating step, thereby raising the gettering effect. CONSTITUTION:Nitrided silicon films 103 are formed on both front and back surfaces of an SiO2 film 102 on a P type Si substrate 101. Ions are injected to the back surface A of the substrate, thereby forming a defective layer 104. The nitrided silicon film on the back surface is not etched, but the film 103 and the SiO2 film on the front surface are selectively etched. With the films as mask a field oxidized film 106 of MOS device is formed. The MOS device is formed by the ordinary method. The nitrided silicon film with the defective layer 104 is retained to the final stage. In this manner, the gettering effect can be increased, thereby improving the device characteristics.
JP13747480A 1980-10-01 1980-10-01 Manufacture of semiconductor device Granted JPS5762538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13747480A JPS5762538A (en) 1980-10-01 1980-10-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13747480A JPS5762538A (en) 1980-10-01 1980-10-01 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5762538A true JPS5762538A (en) 1982-04-15
JPS613090B2 JPS613090B2 (en) 1986-01-30

Family

ID=15199452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13747480A Granted JPS5762538A (en) 1980-10-01 1980-10-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762538A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0251280A2 (en) * 1986-06-30 1988-01-07 Nec Corporation Method of gettering semiconductor wafers with a laser beam
JPH027436A (en) * 1988-06-24 1990-01-11 Sony Corp Manufacture of semiconductor device
JPH04267339A (en) * 1991-02-21 1992-09-22 Toshiba Corp Semiconductor substrate and its manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523381A (en) * 1975-06-24 1977-01-11 Western Electric Co Method of treating semiconductor element
JPS53126866A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Production of semiconductor wafers
JPS542657A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523381A (en) * 1975-06-24 1977-01-11 Western Electric Co Method of treating semiconductor element
JPS53126866A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Production of semiconductor wafers
JPS542657A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0251280A2 (en) * 1986-06-30 1988-01-07 Nec Corporation Method of gettering semiconductor wafers with a laser beam
JPH027436A (en) * 1988-06-24 1990-01-11 Sony Corp Manufacture of semiconductor device
JPH04267339A (en) * 1991-02-21 1992-09-22 Toshiba Corp Semiconductor substrate and its manufacture

Also Published As

Publication number Publication date
JPS613090B2 (en) 1986-01-30

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