JPS5793574A - Manufacture of mis type semiconductor device - Google Patents

Manufacture of mis type semiconductor device

Info

Publication number
JPS5793574A
JPS5793574A JP16985380A JP16985380A JPS5793574A JP S5793574 A JPS5793574 A JP S5793574A JP 16985380 A JP16985380 A JP 16985380A JP 16985380 A JP16985380 A JP 16985380A JP S5793574 A JPS5793574 A JP S5793574A
Authority
JP
Japan
Prior art keywords
substrate
gate
silicon
hydrogen
gate insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16985380A
Other languages
Japanese (ja)
Inventor
Kazuhiko Hashimoto
Shigeru Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16985380A priority Critical patent/JPS5793574A/en
Publication of JPS5793574A publication Critical patent/JPS5793574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To improve the characteristics of a semiconductor by providing means for doping a semiconductor substrate in hydrogen before forming a gate insulating film of the uppermost layer of an MIS type semiconductor device, thereby reducing a boundary level between the substrate and the gate insulator. CONSTITUTION:A hydrogen treatment is carried out via a gate insulator disposed under the gate insulaotr of the upermost layer before forming the gate insulator or directly on a semiconductor substrate. For example, diffused layers 2, 3 are formed on the surface of a P type silicon substrate 1 as a semiconductor substrate, a silicon oxidized film 3 is formed on the surface, a hole 4 is further opened, and hydrogen ions 5 are injected. Subsequently, a silicon oxidized film 6 and a silicon nitrided film 7 are formed at the gate. The hydrogen thus made to invade by the heat treatment of the step of forming the gate insulator S of the two layers is diffused in the substrate 1, thereby reducing the boundary level between the silicon oxidized films 6.
JP16985380A 1980-12-02 1980-12-02 Manufacture of mis type semiconductor device Pending JPS5793574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16985380A JPS5793574A (en) 1980-12-02 1980-12-02 Manufacture of mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16985380A JPS5793574A (en) 1980-12-02 1980-12-02 Manufacture of mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5793574A true JPS5793574A (en) 1982-06-10

Family

ID=15894142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16985380A Pending JPS5793574A (en) 1980-12-02 1980-12-02 Manufacture of mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423363A (en) * 1990-05-14 1992-01-27 Matsushita Electron Corp Manufacture of semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423363A (en) * 1990-05-14 1992-01-27 Matsushita Electron Corp Manufacture of semiconductor memory

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