JPS55145356A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS55145356A JPS55145356A JP5365579A JP5365579A JPS55145356A JP S55145356 A JPS55145356 A JP S55145356A JP 5365579 A JP5365579 A JP 5365579A JP 5365579 A JP5365579 A JP 5365579A JP S55145356 A JPS55145356 A JP S55145356A
- Authority
- JP
- Japan
- Prior art keywords
- film
- phosphorus
- semiconductor device
- wiring metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the disconnection and cracks of a wiring metal in a semiconductor device by forming a CVD SiO2 film as an interlayer insulating film, then forming high density phosphorus glass on the surface of the film by a phosphorus treatment and varying stepwise shape of the film. CONSTITUTION:A field insulating film 302, a gate oxide film 304, a gate metal 305, the first layer wiring metal 306 and a diffused layer 303 are sequentially formed on a silicon substrate 301. Then, a CVD SiO2 film 307 is formed as an interlayer insulating film, treated with phosphorus to diffuse the phosphorus in the film 307, and thus formed with a phosphorus glass layer 308. Thereafter, the second layer wiring metal 309 is formed thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5365579A JPS55145356A (en) | 1979-05-01 | 1979-05-01 | Fabricating method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5365579A JPS55145356A (en) | 1979-05-01 | 1979-05-01 | Fabricating method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55145356A true JPS55145356A (en) | 1980-11-12 |
Family
ID=12948876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5365579A Pending JPS55145356A (en) | 1979-05-01 | 1979-05-01 | Fabricating method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55145356A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425551A (en) * | 1987-07-22 | 1989-01-27 | Toshiba Corp | Semiconductor device |
US7160768B2 (en) | 2003-07-10 | 2007-01-09 | Seiko Epson Corporation | Method of manufacturing electronic device and method of manufacturing semiconductor device |
-
1979
- 1979-05-01 JP JP5365579A patent/JPS55145356A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425551A (en) * | 1987-07-22 | 1989-01-27 | Toshiba Corp | Semiconductor device |
US7160768B2 (en) | 2003-07-10 | 2007-01-09 | Seiko Epson Corporation | Method of manufacturing electronic device and method of manufacturing semiconductor device |
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