JPS647518A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS647518A
JPS647518A JP16107987A JP16107987A JPS647518A JP S647518 A JPS647518 A JP S647518A JP 16107987 A JP16107987 A JP 16107987A JP 16107987 A JP16107987 A JP 16107987A JP S647518 A JPS647518 A JP S647518A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
silica film
heat treatment
different
film layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16107987A
Other languages
Japanese (ja)
Inventor
Takao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16107987A priority Critical patent/JPS647518A/en
Publication of JPS647518A publication Critical patent/JPS647518A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To shorten an embedded layer forming process by a method wherein the first and the second silica film layer, having different densities of impurities contained, are continuously formed on the surface of a semiconductor substrate in such a manner that they come in contact with different position with each other on the surface of the semiconductor substrate. CONSTITUTION:The first and the second silica film layers 5 and 6, having different densities of impurities, are continuously formed on the surface of a semiconductor substrate 1 contacting the different positions with each other, and a heat treatment is conducted subsequently. When a heat treatment is conducted after the first and the second silica film layers 5 and 6 have been formed on the surface of the semiconductor substrate 5 as above-mentioned, embedded layers 7 and 8 having different impurity density, namely, high density and low density, can be formed by a heat treatment simultaneously by conducting impurity diffusion from the first and the second silica film layers 5 and 6. As a result, the embedded layer forming process can be shortened.
JP16107987A 1987-06-30 1987-06-30 Manufacture of semiconductor device Pending JPS647518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16107987A JPS647518A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16107987A JPS647518A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS647518A true JPS647518A (en) 1989-01-11

Family

ID=15728227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16107987A Pending JPS647518A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS647518A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122841A1 (en) * 1998-09-17 2001-08-08 Matsushita Electric Industrial Co., Ltd. Process for producing nitride semiconductor device
WO2006117980A1 (en) * 2005-04-26 2006-11-09 Shin-Etsu Handotai Co., Ltd. Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122841A1 (en) * 1998-09-17 2001-08-08 Matsushita Electric Industrial Co., Ltd. Process for producing nitride semiconductor device
WO2006117980A1 (en) * 2005-04-26 2006-11-09 Shin-Etsu Handotai Co., Ltd. Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method
JP2006310373A (en) * 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd Solar cell manufacturing method, solar cell and semiconductor device manufacturing method

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