JPS6477144A - Growth method of metallic film for semiconductor device - Google Patents

Growth method of metallic film for semiconductor device

Info

Publication number
JPS6477144A
JPS6477144A JP23380287A JP23380287A JPS6477144A JP S6477144 A JPS6477144 A JP S6477144A JP 23380287 A JP23380287 A JP 23380287A JP 23380287 A JP23380287 A JP 23380287A JP S6477144 A JPS6477144 A JP S6477144A
Authority
JP
Japan
Prior art keywords
metallic film
film
metallic
parts
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23380287A
Other languages
Japanese (ja)
Inventor
Akira Haga
Yoshimasa Hiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23380287A priority Critical patent/JPS6477144A/en
Publication of JPS6477144A publication Critical patent/JPS6477144A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To generate a boundary part in parallel to the surface of a metallic wiring and to make metallic film dissipating parts disperse without making the metallic film dissipating parts concentrate at one place by a method wherein, when a metallic film for wiring is formed on a semiconductor substrate, the growth process of the metallic film is divided into at least two times or more of growth processes to perform the formation of the metallic film of a desired film thickness and moreover, a cooling process in a vacuum is provided between the above growth processes. CONSTITUTION:The growth process of a metallic film is divided into two stages and a vacuum cooling process is put between the divided growth processes, whereby a boundary part 4 is generated. After that, an upper insulating film for surface protection is coated on a metallic film (layer) 12 and an insulating film to be exposed. At this time, metallic film dissipating parts 15 and 15' are generated, but the parts 15 and 15' are checked by the part 4. Thereby, the parts 15 and 15' can be made to disperse without concentration in one place.
JP23380287A 1987-09-18 1987-09-18 Growth method of metallic film for semiconductor device Pending JPS6477144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23380287A JPS6477144A (en) 1987-09-18 1987-09-18 Growth method of metallic film for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23380287A JPS6477144A (en) 1987-09-18 1987-09-18 Growth method of metallic film for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477144A true JPS6477144A (en) 1989-03-23

Family

ID=16960811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23380287A Pending JPS6477144A (en) 1987-09-18 1987-09-18 Growth method of metallic film for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477144A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100451A (en) * 1980-01-14 1981-08-12 Matsushita Electric Ind Co Ltd Manufacture of electrode of semiconductor device
JPS5968952A (en) * 1982-10-13 1984-04-19 Sanyo Electric Co Ltd Formation of wiring

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100451A (en) * 1980-01-14 1981-08-12 Matsushita Electric Ind Co Ltd Manufacture of electrode of semiconductor device
JPS5968952A (en) * 1982-10-13 1984-04-19 Sanyo Electric Co Ltd Formation of wiring

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