JPS6477144A - Growth method of metallic film for semiconductor device - Google Patents
Growth method of metallic film for semiconductor deviceInfo
- Publication number
- JPS6477144A JPS6477144A JP23380287A JP23380287A JPS6477144A JP S6477144 A JPS6477144 A JP S6477144A JP 23380287 A JP23380287 A JP 23380287A JP 23380287 A JP23380287 A JP 23380287A JP S6477144 A JPS6477144 A JP S6477144A
- Authority
- JP
- Japan
- Prior art keywords
- metallic film
- film
- metallic
- parts
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To generate a boundary part in parallel to the surface of a metallic wiring and to make metallic film dissipating parts disperse without making the metallic film dissipating parts concentrate at one place by a method wherein, when a metallic film for wiring is formed on a semiconductor substrate, the growth process of the metallic film is divided into at least two times or more of growth processes to perform the formation of the metallic film of a desired film thickness and moreover, a cooling process in a vacuum is provided between the above growth processes. CONSTITUTION:The growth process of a metallic film is divided into two stages and a vacuum cooling process is put between the divided growth processes, whereby a boundary part 4 is generated. After that, an upper insulating film for surface protection is coated on a metallic film (layer) 12 and an insulating film to be exposed. At this time, metallic film dissipating parts 15 and 15' are generated, but the parts 15 and 15' are checked by the part 4. Thereby, the parts 15 and 15' can be made to disperse without concentration in one place.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23380287A JPS6477144A (en) | 1987-09-18 | 1987-09-18 | Growth method of metallic film for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23380287A JPS6477144A (en) | 1987-09-18 | 1987-09-18 | Growth method of metallic film for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477144A true JPS6477144A (en) | 1989-03-23 |
Family
ID=16960811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23380287A Pending JPS6477144A (en) | 1987-09-18 | 1987-09-18 | Growth method of metallic film for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477144A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100451A (en) * | 1980-01-14 | 1981-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of electrode of semiconductor device |
JPS5968952A (en) * | 1982-10-13 | 1984-04-19 | Sanyo Electric Co Ltd | Formation of wiring |
-
1987
- 1987-09-18 JP JP23380287A patent/JPS6477144A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100451A (en) * | 1980-01-14 | 1981-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of electrode of semiconductor device |
JPS5968952A (en) * | 1982-10-13 | 1984-04-19 | Sanyo Electric Co Ltd | Formation of wiring |
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