JPS56125856A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56125856A
JPS56125856A JP2876380A JP2876380A JPS56125856A JP S56125856 A JPS56125856 A JP S56125856A JP 2876380 A JP2876380 A JP 2876380A JP 2876380 A JP2876380 A JP 2876380A JP S56125856 A JPS56125856 A JP S56125856A
Authority
JP
Japan
Prior art keywords
insulating film
inter
layer insulating
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2876380A
Other languages
Japanese (ja)
Inventor
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2876380A priority Critical patent/JPS56125856A/en
Publication of JPS56125856A publication Critical patent/JPS56125856A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an inter-layer insulating film flat on the surface and not cracked by a method wherein a connection window is formed on the inter-layer insulating film layer made of organosiloxane resin on a semiconductor substrate by an ion-beam etching of an inactive element with a photoresist film as a mask. CONSTITUTION:A silicon dioxide film 2 and an aluminum wiring body 3 are formed on a silicon substrate 1, coated with the organosiloxane resin and heat- treated to form the inter-layer insulating film 4. Then, a photoresist film 6 in which a part to be formed with a through hole is allowed to be an opening is formed on the insulating film 4. Subsequently, the through hole 7 is formed by applying the ion etching using argon, and also the photoresist film 6 is removed. Then, a wiring layer 8 of Al or the like is selectively formed. Accordingly, since the O2-plasma is not used for forming the inter-layer insulating film, the inter-layer insulating film is not cracked and the insulating film flat on the surface can be obtained.
JP2876380A 1980-03-07 1980-03-07 Manufacture of semiconductor device Pending JPS56125856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2876380A JPS56125856A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2876380A JPS56125856A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56125856A true JPS56125856A (en) 1981-10-02

Family

ID=12257438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2876380A Pending JPS56125856A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56125856A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122078A2 (en) * 1983-04-06 1984-10-17 Plessey Overseas Limited Integrated circuit processing methods
JPS59225529A (en) * 1983-06-06 1984-12-18 Toshiba Corp Method for flattening insulation layer
JPS61228633A (en) * 1985-04-02 1986-10-11 Hitachi Ltd Formation of thin film
US7731860B2 (en) 2003-04-03 2010-06-08 Microemissive Displays Limited Ion beam method for removing an organic light emitting material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122078A2 (en) * 1983-04-06 1984-10-17 Plessey Overseas Limited Integrated circuit processing methods
JPS59225529A (en) * 1983-06-06 1984-12-18 Toshiba Corp Method for flattening insulation layer
JPS61228633A (en) * 1985-04-02 1986-10-11 Hitachi Ltd Formation of thin film
US7731860B2 (en) 2003-04-03 2010-06-08 Microemissive Displays Limited Ion beam method for removing an organic light emitting material

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