JPS56137655A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56137655A
JPS56137655A JP4067980A JP4067980A JPS56137655A JP S56137655 A JPS56137655 A JP S56137655A JP 4067980 A JP4067980 A JP 4067980A JP 4067980 A JP4067980 A JP 4067980A JP S56137655 A JPS56137655 A JP S56137655A
Authority
JP
Japan
Prior art keywords
resist
layer
wiring
psg113
eaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4067980A
Other languages
Japanese (ja)
Inventor
Atsuhiko Menju
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4067980A priority Critical patent/JPS56137655A/en
Priority to EP19810102119 priority patent/EP0037040B1/en
Priority to DE8181102119T priority patent/DE3173484D1/en
Publication of JPS56137655A publication Critical patent/JPS56137655A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing

Abstract

PURPOSE:To lay fine wiring without any adverse effect on the properties of an element by using impurity-added glass as spacer, providing an eaves of resist through the application of a resist mask and subsequent glass etching, and then removing the resist with the building up of a metal. CONSTITUTION:An opening 111 is provided in a silicon dioxide 110 on a silicon substrate where a diffusion layer is formed as prearranged and a silicon dioxide layer 112 and PSG113 with no impurities added are overlapped. Following this procedure, a resist mask 14 is applied and a window is opened in the PSG113 by combined means of aerotropic and isotropic etchings to create an eaves. Next, if an aluminum and silicon alloy 116 is built up, a stepped cut is assured. With the resist removed, fine wirings 117-119 are obtained. The second layer of aluminum wiring 121 is created through an interlayer insulation film 120. Under this constitution, there is no stepped out because of the formation of the second layer of wiring on a flat surface. Besides, the stepped cut of the alloy 116 is assured thus enabling the formation of fine wiring to be realized and a device of high reliability to be available.
JP4067980A 1980-03-29 1980-03-29 Manufacture of semiconductor device Pending JPS56137655A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4067980A JPS56137655A (en) 1980-03-29 1980-03-29 Manufacture of semiconductor device
EP19810102119 EP0037040B1 (en) 1980-03-29 1981-03-20 Method of manufacturing a semiconductor device
DE8181102119T DE3173484D1 (en) 1980-03-29 1981-03-20 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4067980A JPS56137655A (en) 1980-03-29 1980-03-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56137655A true JPS56137655A (en) 1981-10-27

Family

ID=12587212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4067980A Pending JPS56137655A (en) 1980-03-29 1980-03-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56137655A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948958A (en) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト Semiconductor integrated circuit
US7112468B2 (en) 1998-09-25 2006-09-26 Stmicroelectronics, Inc. Stacked multi-component integrated circuit microprocessor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948958A (en) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト Semiconductor integrated circuit
JPH0241902B2 (en) * 1982-08-12 1990-09-19
US7112468B2 (en) 1998-09-25 2006-09-26 Stmicroelectronics, Inc. Stacked multi-component integrated circuit microprocessor

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