JPS56165339A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56165339A
JPS56165339A JP6928280A JP6928280A JPS56165339A JP S56165339 A JPS56165339 A JP S56165339A JP 6928280 A JP6928280 A JP 6928280A JP 6928280 A JP6928280 A JP 6928280A JP S56165339 A JPS56165339 A JP S56165339A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
wiring
coated
layer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6928280A
Other languages
Japanese (ja)
Other versions
JPS6239823B2 (en
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6928280A priority Critical patent/JPS56165339A/en
Publication of JPS56165339A publication Critical patent/JPS56165339A/en
Publication of JPS6239823B2 publication Critical patent/JPS6239823B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To decrease difference in steps by a lower layer wiring layer and obtain a semiconductor device having high performance and high reliability, which is provided with minute multilayer wiring, by coating an etched section of lower wiring with an electric insulating film and burying the etched section. CONSTITUTION:A silicon substrate 21 to which the desired P-N junction is formed is coated with a silicon oxide film 22, an opening for forming an electrode is made up and lower layer wiring 24 in aluminum is coated. Etched sections 26 reaching the silicon oxide film 22 are built up using a photoresist 25 as a mask. The photoresist 25 is removed, a silicon oxide film 27 is coated in thickness more than the half of the etching width of the lower layer wiring 24, the etched sections 26 are buried and the surface is planed. An opening 28 is formed to the silicon oxide film 27, and upper layer wiring 29 is made up according to the coating of aluminum and a selective etching method. Thus, the unevenness of the surface is reduced extremely, and minute multilayer wiring is built up.
JP6928280A 1980-05-23 1980-05-23 Semiconductor device Granted JPS56165339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6928280A JPS56165339A (en) 1980-05-23 1980-05-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6928280A JPS56165339A (en) 1980-05-23 1980-05-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56165339A true JPS56165339A (en) 1981-12-18
JPS6239823B2 JPS6239823B2 (en) 1987-08-25

Family

ID=13398111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6928280A Granted JPS56165339A (en) 1980-05-23 1980-05-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165339A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175440A (en) * 1984-02-20 1985-09-09 Matsushita Electronics Corp Manufacture of semiconductor device
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175440A (en) * 1984-02-20 1985-09-09 Matsushita Electronics Corp Manufacture of semiconductor device
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Also Published As

Publication number Publication date
JPS6239823B2 (en) 1987-08-25

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