JPS57100731A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57100731A
JPS57100731A JP17697580A JP17697580A JPS57100731A JP S57100731 A JPS57100731 A JP S57100731A JP 17697580 A JP17697580 A JP 17697580A JP 17697580 A JP17697580 A JP 17697580A JP S57100731 A JPS57100731 A JP S57100731A
Authority
JP
Japan
Prior art keywords
silicon nitride
hole
layer
nitride film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17697580A
Other languages
Japanese (ja)
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17697580A priority Critical patent/JPS57100731A/en
Publication of JPS57100731A publication Critical patent/JPS57100731A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
    • G02B6/3692—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier with surface micromachining involving etching, e.g. wet or dry etching steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a hole of a silicon nitride film having smooth taper by forming a through hole selectively formed at the silicon nitride films of different two layers for plasma chemical reaction. CONSTITUTION:The first layer 12 of silicon nitride film is formed by plasma chemical reaction on the surface of a semiconductor substrate 11, a silicon nitride film 13 of the second layer having faster etching speed than the first layer is continuously formed, a photoresist film 14 is coated thereon, is exposed and developed to open a window 15 for silicon nitride film hole. Since the film 13 having faster etching speed is disposed at the upper layer by plasma dry etching, the etched surface of the silicon nitride has a hole step 16 smoothly tapered at 25-45 deg. is formed. Since the stepwise part is smooth, the disconnection of the metallic wire formed thereon can be prevented.
JP17697580A 1980-12-15 1980-12-15 Manufacture of semiconductor device Pending JPS57100731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17697580A JPS57100731A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17697580A JPS57100731A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100731A true JPS57100731A (en) 1982-06-23

Family

ID=16022976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17697580A Pending JPS57100731A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100731A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169142A (en) * 1983-03-16 1984-09-25 Toshiba Corp Forming method for nitrided film
JPS6320837A (en) * 1986-07-11 1988-01-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of nitride film
JPS6334928A (en) * 1986-07-29 1988-02-15 Mitsubishi Electric Corp Formation of through hole
US4814041A (en) * 1986-10-08 1989-03-21 International Business Machines Corporation Method of forming a via-hole having a desired slope in a photoresist masked composite insulating layer
JPH04252031A (en) * 1991-01-28 1992-09-08 Nec Corp Insulating film and its formation, formation of insulating-film pattern and manufacture of semiconductor device
WO1996023238A3 (en) * 1995-01-27 1996-09-26 Cambridge Consultants Miniature mounting device
WO1998030926A3 (en) * 1997-01-07 1999-01-14 Cambridge Consultants Hybrid chip process
KR100477135B1 (en) * 1997-08-08 2005-06-29 삼성전자주식회사 Manufacturing method of semiconductor device
WO2011004717A1 (en) * 2009-07-06 2011-01-13 シャープ株式会社 Contact-hole forming method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169142A (en) * 1983-03-16 1984-09-25 Toshiba Corp Forming method for nitrided film
JPS6320837A (en) * 1986-07-11 1988-01-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of nitride film
JPS6334928A (en) * 1986-07-29 1988-02-15 Mitsubishi Electric Corp Formation of through hole
US4814041A (en) * 1986-10-08 1989-03-21 International Business Machines Corporation Method of forming a via-hole having a desired slope in a photoresist masked composite insulating layer
JPH04252031A (en) * 1991-01-28 1992-09-08 Nec Corp Insulating film and its formation, formation of insulating-film pattern and manufacture of semiconductor device
US5961849A (en) * 1995-01-25 1999-10-05 Cambridge Consultants Ltd. Miniature mounting device and method
WO1996023238A3 (en) * 1995-01-27 1996-09-26 Cambridge Consultants Miniature mounting device
WO1998030926A3 (en) * 1997-01-07 1999-01-14 Cambridge Consultants Hybrid chip process
KR100477135B1 (en) * 1997-08-08 2005-06-29 삼성전자주식회사 Manufacturing method of semiconductor device
WO2011004717A1 (en) * 2009-07-06 2011-01-13 シャープ株式会社 Contact-hole forming method

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