JPS57199237A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57199237A
JPS57199237A JP8468581A JP8468581A JPS57199237A JP S57199237 A JPS57199237 A JP S57199237A JP 8468581 A JP8468581 A JP 8468581A JP 8468581 A JP8468581 A JP 8468581A JP S57199237 A JPS57199237 A JP S57199237A
Authority
JP
Japan
Prior art keywords
oxide film
opening
tapered portion
cvd
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8468581A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Kazutoshi Nagano
Seiji Onaka
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8468581A priority Critical patent/JPS57199237A/en
Publication of JPS57199237A publication Critical patent/JPS57199237A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent breaking of metal wiring, by a method wherein an insulation film of two layers being different in etching rate is used and an opening with tapered portion is formed. CONSTITUTION:A first oxide film 12 is formed on main surface of a solicon substrate 11 by thermal oxidation process, and a second oxide film 13 is formed on the first oxide film 12 by CVD. Etching is performed using a photo mask 20, and an opening 14 with tapered portion is formed on the oxide film 12 according to difference of etching rate between both oxide films 12, 13. After removing the mask 20, a third oxide film 15 is formed by CVD. The oxide film 15 is etched using a photo mask, and an opening 16 is formed within the opening 14. A metal wiring 17 is formed, and breaking is prevented by the tapered portion of the first oxide film 12 and covering of edge of the second oxide film 13 with the third oxide film 15.
JP8468581A 1981-06-01 1981-06-01 Manufacture of semiconductor device Pending JPS57199237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8468581A JPS57199237A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8468581A JPS57199237A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57199237A true JPS57199237A (en) 1982-12-07

Family

ID=13837534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8468581A Pending JPS57199237A (en) 1981-06-01 1981-06-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199237A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601846A (en) * 1983-06-18 1985-01-08 Toshiba Corp Multilayer interconnection structure semiconductor device and manufacture thereof
JPS642335A (en) * 1987-06-24 1989-01-06 Nec Corp Manufacture of semiconductor device
JP2014164019A (en) * 2013-02-22 2014-09-08 Seiko Epson Corp Wavelength variable interference filter, optical filter device, optical module, and electronic equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5373085A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Formation of fine electrode window

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5373085A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Formation of fine electrode window

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601846A (en) * 1983-06-18 1985-01-08 Toshiba Corp Multilayer interconnection structure semiconductor device and manufacture thereof
JPS642335A (en) * 1987-06-24 1989-01-06 Nec Corp Manufacture of semiconductor device
JP2014164019A (en) * 2013-02-22 2014-09-08 Seiko Epson Corp Wavelength variable interference filter, optical filter device, optical module, and electronic equipment

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