JPS57199237A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57199237A JPS57199237A JP8468581A JP8468581A JPS57199237A JP S57199237 A JPS57199237 A JP S57199237A JP 8468581 A JP8468581 A JP 8468581A JP 8468581 A JP8468581 A JP 8468581A JP S57199237 A JPS57199237 A JP S57199237A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- opening
- tapered portion
- cvd
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent breaking of metal wiring, by a method wherein an insulation film of two layers being different in etching rate is used and an opening with tapered portion is formed. CONSTITUTION:A first oxide film 12 is formed on main surface of a solicon substrate 11 by thermal oxidation process, and a second oxide film 13 is formed on the first oxide film 12 by CVD. Etching is performed using a photo mask 20, and an opening 14 with tapered portion is formed on the oxide film 12 according to difference of etching rate between both oxide films 12, 13. After removing the mask 20, a third oxide film 15 is formed by CVD. The oxide film 15 is etched using a photo mask, and an opening 16 is formed within the opening 14. A metal wiring 17 is formed, and breaking is prevented by the tapered portion of the first oxide film 12 and covering of edge of the second oxide film 13 with the third oxide film 15.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8468581A JPS57199237A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8468581A JPS57199237A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57199237A true JPS57199237A (en) | 1982-12-07 |
Family
ID=13837534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8468581A Pending JPS57199237A (en) | 1981-06-01 | 1981-06-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57199237A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS601846A (en) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | Multilayer interconnection structure semiconductor device and manufacture thereof |
JPS642335A (en) * | 1987-06-24 | 1989-01-06 | Nec Corp | Manufacture of semiconductor device |
JP2014164019A (en) * | 2013-02-22 | 2014-09-08 | Seiko Epson Corp | Wavelength variable interference filter, optical filter device, optical module, and electronic equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5373085A (en) * | 1976-12-11 | 1978-06-29 | Fujitsu Ltd | Formation of fine electrode window |
-
1981
- 1981-06-01 JP JP8468581A patent/JPS57199237A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5373085A (en) * | 1976-12-11 | 1978-06-29 | Fujitsu Ltd | Formation of fine electrode window |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS601846A (en) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | Multilayer interconnection structure semiconductor device and manufacture thereof |
JPS642335A (en) * | 1987-06-24 | 1989-01-06 | Nec Corp | Manufacture of semiconductor device |
JP2014164019A (en) * | 2013-02-22 | 2014-09-08 | Seiko Epson Corp | Wavelength variable interference filter, optical filter device, optical module, and electronic equipment |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57199237A (en) | Manufacture of semiconductor device | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS57204146A (en) | Manufacture of semiconductor device | |
JPS5513904A (en) | Semiconductor device and its manufacturing method | |
JPS571243A (en) | Manufacture of semiconductor device | |
JPS5718362A (en) | Semiconductor device and manufacture thereof | |
JPS54162490A (en) | Manufacture of semiconductor device | |
JPS5455375A (en) | Production of semiconductor device | |
JPS56130925A (en) | Manufacture of semiconductor device | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS5513934A (en) | Method for forming insulated film on semiconductor layer | |
JPS5737849A (en) | Manufacture of semiconductor device | |
JPS649639A (en) | Manufacture of insulating film for element isolation of semiconductor device | |
JPS5648151A (en) | Wiring formation of semiconductor device | |
JPS55115330A (en) | Manufacturing method of semiconductor device | |
JPS57177542A (en) | Manufacturing method for semiconductor device | |
JPS56142641A (en) | Semiconductor device | |
JPS5754346A (en) | Formation of polycrystalline silicon wiring layer | |
JPS57184217A (en) | Manufacture of semiconductor device | |
JPS5575243A (en) | Method of fabricating mis semiconductor device having two-layer polycrystalline silicon wired layer | |
JPS5797646A (en) | Manufacture of semiconductor device | |
JPS5797643A (en) | Manufacture of semiconductor device | |
JPS5748270A (en) | Semiconductor device | |
JPS56157047A (en) | Manufacture of multilayer wiring in semiconductor device | |
JPS57121231A (en) | Manufacture of semiconductor device |