JPS5797646A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5797646A JPS5797646A JP17427580A JP17427580A JPS5797646A JP S5797646 A JPS5797646 A JP S5797646A JP 17427580 A JP17427580 A JP 17427580A JP 17427580 A JP17427580 A JP 17427580A JP S5797646 A JPS5797646 A JP S5797646A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- oxide film
- film
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent forming of overhang around wiring by patterning a wiring material layer leaving a part of the thickness of the layer at the side wall and in non-wired region on a semiconductor substrate. CONSTITUTION:A field oxide film 12 is grown on a semiconductor substrate 11 and, after forming a silicon multi-crystal layer 13 on the film 12, a photo resist film 14 is formed by the photo etching method. The first layer wiring 15 is formed by etching, leaving a multi-crystal silicon thin film 13 in the vicinity of the interface of the side wall of the wiring 15 and the oxide film 12. The thermal oxidation is performed after removing the photo resist film 14. Because of the remaining silicon thin layer 13 the oxide film 16 of uniform thickness is grown without producing overhangs due to the difference in oxidation rate between the multi-crystal silicon wiring and the field oxide film. After this, the second layer wiring 8 is formed on the oxide film 16.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17427580A JPS5797646A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17427580A JPS5797646A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5797646A true JPS5797646A (en) | 1982-06-17 |
JPS6137781B2 JPS6137781B2 (en) | 1986-08-26 |
Family
ID=15975803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17427580A Granted JPS5797646A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5797646A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62153872U (en) * | 1986-03-20 | 1987-09-30 |
-
1980
- 1980-12-10 JP JP17427580A patent/JPS5797646A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6137781B2 (en) | 1986-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5534442A (en) | Preparation of semiconductor device | |
JPS5555559A (en) | Method of fabricating semiconductor device | |
JPS5444481A (en) | Mos type semiconductor device and its manufacture | |
JPS5797646A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS571243A (en) | Manufacture of semiconductor device | |
JPS5779642A (en) | Manufacture of semiconductor device | |
JPS57100733A (en) | Etching method for semiconductor substrate | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS57199237A (en) | Manufacture of semiconductor device | |
JPS54139486A (en) | Manufacture of semiconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS56111265A (en) | Manufacture of semiconductor device | |
JPS5797629A (en) | Manufacture of semiconductor device | |
JPS551150A (en) | Method of fabricating semiconductor device | |
JPS5718362A (en) | Semiconductor device and manufacture thereof | |
JPS6477944A (en) | Manufacture of semiconductor device | |
JPS57177542A (en) | Manufacturing method for semiconductor device | |
JPS5648151A (en) | Wiring formation of semiconductor device | |
JPS5753957A (en) | Manufacture of semiconductor device | |
JPS5780776A (en) | Mos field effect semiconductor device and manufacture thereof | |
JPS57118631A (en) | Manufacture of semiconductor substrate | |
JPS5768048A (en) | Semiconductor device and manufacture thereof | |
JPS5562750A (en) | Semiconductor integrated circuit device |