JPS5797646A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797646A
JPS5797646A JP17427580A JP17427580A JPS5797646A JP S5797646 A JPS5797646 A JP S5797646A JP 17427580 A JP17427580 A JP 17427580A JP 17427580 A JP17427580 A JP 17427580A JP S5797646 A JPS5797646 A JP S5797646A
Authority
JP
Japan
Prior art keywords
wiring
layer
oxide film
film
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17427580A
Other languages
Japanese (ja)
Other versions
JPS6137781B2 (en
Inventor
Yoshihide Nagakubo
Hiroyuki Nihei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17427580A priority Critical patent/JPS5797646A/en
Publication of JPS5797646A publication Critical patent/JPS5797646A/en
Publication of JPS6137781B2 publication Critical patent/JPS6137781B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent forming of overhang around wiring by patterning a wiring material layer leaving a part of the thickness of the layer at the side wall and in non-wired region on a semiconductor substrate. CONSTITUTION:A field oxide film 12 is grown on a semiconductor substrate 11 and, after forming a silicon multi-crystal layer 13 on the film 12, a photo resist film 14 is formed by the photo etching method. The first layer wiring 15 is formed by etching, leaving a multi-crystal silicon thin film 13 in the vicinity of the interface of the side wall of the wiring 15 and the oxide film 12. The thermal oxidation is performed after removing the photo resist film 14. Because of the remaining silicon thin layer 13 the oxide film 16 of uniform thickness is grown without producing overhangs due to the difference in oxidation rate between the multi-crystal silicon wiring and the field oxide film. After this, the second layer wiring 8 is formed on the oxide film 16.
JP17427580A 1980-12-10 1980-12-10 Manufacture of semiconductor device Granted JPS5797646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17427580A JPS5797646A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17427580A JPS5797646A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5797646A true JPS5797646A (en) 1982-06-17
JPS6137781B2 JPS6137781B2 (en) 1986-08-26

Family

ID=15975803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17427580A Granted JPS5797646A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797646A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153872U (en) * 1986-03-20 1987-09-30

Also Published As

Publication number Publication date
JPS6137781B2 (en) 1986-08-26

Similar Documents

Publication Publication Date Title
JPS5534442A (en) Preparation of semiconductor device
JPS5555559A (en) Method of fabricating semiconductor device
JPS5444481A (en) Mos type semiconductor device and its manufacture
JPS5797646A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS5779642A (en) Manufacture of semiconductor device
JPS57100733A (en) Etching method for semiconductor substrate
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57199237A (en) Manufacture of semiconductor device
JPS54139486A (en) Manufacture of semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS56111265A (en) Manufacture of semiconductor device
JPS5797629A (en) Manufacture of semiconductor device
JPS551150A (en) Method of fabricating semiconductor device
JPS5718362A (en) Semiconductor device and manufacture thereof
JPS6477944A (en) Manufacture of semiconductor device
JPS57177542A (en) Manufacturing method for semiconductor device
JPS5648151A (en) Wiring formation of semiconductor device
JPS5753957A (en) Manufacture of semiconductor device
JPS5780776A (en) Mos field effect semiconductor device and manufacture thereof
JPS57118631A (en) Manufacture of semiconductor substrate
JPS5768048A (en) Semiconductor device and manufacture thereof
JPS5562750A (en) Semiconductor integrated circuit device