JPS551150A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS551150A
JPS551150A JP7444078A JP7444078A JPS551150A JP S551150 A JPS551150 A JP S551150A JP 7444078 A JP7444078 A JP 7444078A JP 7444078 A JP7444078 A JP 7444078A JP S551150 A JPS551150 A JP S551150A
Authority
JP
Japan
Prior art keywords
film
wiring layer
wiring
pinhole
circuiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7444078A
Other languages
Japanese (ja)
Inventor
Takamichi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7444078A priority Critical patent/JPS551150A/en
Publication of JPS551150A publication Critical patent/JPS551150A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To provide the subject method comprising the steps: coating a first wiring layer with an isolating film in forming a multilayer wiring structure, carrying out etching of the first wiring layer through a pinhole formed on said film, and thereafter coating said film with a second wiring layer, thereby to completely interrupt the first and second wiring layers to prevent short-circuiting thereof.
CONSTITUTION: A semiconductor substrate 6 on which an element region is formed is coated through a SiO2 film 7 with a first wiring layer 1 made of polycrystal Si, and on said first wiring layer 1 there is grown a CVDSiO2 film 2 for isolation. Upon this occasion, since a pinhole 3 may be produced sometimes on the film 2, though it is undesirable, the polycrystal first wiring layer 1 below the pinhole 3 is removed by etching. Thereafter, in order to prevent the short-circuiting more completely, the end part of the wiring layer 1 remaining after the removal is replaced by the SiO2 film 4, and the film 2 is coated with an Al film 5 which is a second layer wiring. According to this arrangement, no short circuiting of upper and lower wiring layers is produced.
COPYRIGHT: (C)1980,JPO&Japio
JP7444078A 1978-06-19 1978-06-19 Method of fabricating semiconductor device Pending JPS551150A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7444078A JPS551150A (en) 1978-06-19 1978-06-19 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7444078A JPS551150A (en) 1978-06-19 1978-06-19 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS551150A true JPS551150A (en) 1980-01-07

Family

ID=13547287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7444078A Pending JPS551150A (en) 1978-06-19 1978-06-19 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS551150A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190041A (en) * 1982-04-28 1983-11-05 Toshiba Corp Preparation of drive circuit substrate for display device
JPH01158776A (en) * 1987-12-16 1989-06-21 Toshiba Corp Manufacture of thin film device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190041A (en) * 1982-04-28 1983-11-05 Toshiba Corp Preparation of drive circuit substrate for display device
JPH01158776A (en) * 1987-12-16 1989-06-21 Toshiba Corp Manufacture of thin film device

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