JPS551150A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS551150A JPS551150A JP7444078A JP7444078A JPS551150A JP S551150 A JPS551150 A JP S551150A JP 7444078 A JP7444078 A JP 7444078A JP 7444078 A JP7444078 A JP 7444078A JP S551150 A JPS551150 A JP S551150A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring layer
- wiring
- pinhole
- circuiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To provide the subject method comprising the steps: coating a first wiring layer with an isolating film in forming a multilayer wiring structure, carrying out etching of the first wiring layer through a pinhole formed on said film, and thereafter coating said film with a second wiring layer, thereby to completely interrupt the first and second wiring layers to prevent short-circuiting thereof.
CONSTITUTION: A semiconductor substrate 6 on which an element region is formed is coated through a SiO2 film 7 with a first wiring layer 1 made of polycrystal Si, and on said first wiring layer 1 there is grown a CVDSiO2 film 2 for isolation. Upon this occasion, since a pinhole 3 may be produced sometimes on the film 2, though it is undesirable, the polycrystal first wiring layer 1 below the pinhole 3 is removed by etching. Thereafter, in order to prevent the short-circuiting more completely, the end part of the wiring layer 1 remaining after the removal is replaced by the SiO2 film 4, and the film 2 is coated with an Al film 5 which is a second layer wiring. According to this arrangement, no short circuiting of upper and lower wiring layers is produced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7444078A JPS551150A (en) | 1978-06-19 | 1978-06-19 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7444078A JPS551150A (en) | 1978-06-19 | 1978-06-19 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS551150A true JPS551150A (en) | 1980-01-07 |
Family
ID=13547287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7444078A Pending JPS551150A (en) | 1978-06-19 | 1978-06-19 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS551150A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190041A (en) * | 1982-04-28 | 1983-11-05 | Toshiba Corp | Preparation of drive circuit substrate for display device |
JPH01158776A (en) * | 1987-12-16 | 1989-06-21 | Toshiba Corp | Manufacture of thin film device |
-
1978
- 1978-06-19 JP JP7444078A patent/JPS551150A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190041A (en) * | 1982-04-28 | 1983-11-05 | Toshiba Corp | Preparation of drive circuit substrate for display device |
JPH01158776A (en) * | 1987-12-16 | 1989-06-21 | Toshiba Corp | Manufacture of thin film device |
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