JPS55138856A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55138856A JPS55138856A JP4659479A JP4659479A JPS55138856A JP S55138856 A JPS55138856 A JP S55138856A JP 4659479 A JP4659479 A JP 4659479A JP 4659479 A JP4659479 A JP 4659479A JP S55138856 A JPS55138856 A JP S55138856A
- Authority
- JP
- Japan
- Prior art keywords
- psg
- wire
- film
- semiconductor device
- approx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve the voltage resistance between metallic layers in a semiconductor device by employing fundamental structure of Al-Cu/PSG/Al-Cu or Al-Si- Cu/PSG/Al-Si-Cu. CONSTITUTION:An Al-Cu alloy is coated in approx. 5,000Angstrom thick as the first layer wire 2 on a semiconductor substrate 1 to form a wiring pattern, a silica film 3 for preventing the disconnection of wire is then coated thereon, and approx. 10,000Angstrom thick of a PSG film 4 is grown thereon in a vapor phase growing process. Thereafter, a through hole 5 is perforated in the film and layers 4, 3 and 2, and an impurity layer 6 such as oxide or fluoride or the like produced in the lower metallic wire is removed by a sputtering etching process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4659479A JPS55138856A (en) | 1979-04-18 | 1979-04-18 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4659479A JPS55138856A (en) | 1979-04-18 | 1979-04-18 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55138856A true JPS55138856A (en) | 1980-10-30 |
Family
ID=12751616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4659479A Pending JPS55138856A (en) | 1979-04-18 | 1979-04-18 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138856A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871628A (en) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5925246A (en) * | 1982-08-02 | 1984-02-09 | Nec Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 |
-
1979
- 1979-04-18 JP JP4659479A patent/JPS55138856A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871628A (en) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0263295B2 (en) * | 1981-10-23 | 1990-12-27 | Fujitsu Ltd | |
JPS5925246A (en) * | 1982-08-02 | 1984-02-09 | Nec Corp | Manufacture of semiconductor device |
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