JPS55138856A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS55138856A
JPS55138856A JP4659479A JP4659479A JPS55138856A JP S55138856 A JPS55138856 A JP S55138856A JP 4659479 A JP4659479 A JP 4659479A JP 4659479 A JP4659479 A JP 4659479A JP S55138856 A JPS55138856 A JP S55138856A
Authority
JP
Japan
Prior art keywords
psg
wire
film
semiconductor device
approx
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4659479A
Other languages
Japanese (ja)
Inventor
Kazuo Yamaguchi
Takatoshi Ushigoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4659479A priority Critical patent/JPS55138856A/en
Publication of JPS55138856A publication Critical patent/JPS55138856A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the voltage resistance between metallic layers in a semiconductor device by employing fundamental structure of Al-Cu/PSG/Al-Cu or Al-Si- Cu/PSG/Al-Si-Cu. CONSTITUTION:An Al-Cu alloy is coated in approx. 5,000Angstrom thick as the first layer wire 2 on a semiconductor substrate 1 to form a wiring pattern, a silica film 3 for preventing the disconnection of wire is then coated thereon, and approx. 10,000Angstrom thick of a PSG film 4 is grown thereon in a vapor phase growing process. Thereafter, a through hole 5 is perforated in the film and layers 4, 3 and 2, and an impurity layer 6 such as oxide or fluoride or the like produced in the lower metallic wire is removed by a sputtering etching process.
JP4659479A 1979-04-18 1979-04-18 Method of fabricating semiconductor device Pending JPS55138856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4659479A JPS55138856A (en) 1979-04-18 1979-04-18 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4659479A JPS55138856A (en) 1979-04-18 1979-04-18 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138856A true JPS55138856A (en) 1980-10-30

Family

ID=12751616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4659479A Pending JPS55138856A (en) 1979-04-18 1979-04-18 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138856A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871628A (en) * 1981-10-23 1983-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPS5925246A (en) * 1982-08-02 1984-02-09 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871628A (en) * 1981-10-23 1983-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPH0263295B2 (en) * 1981-10-23 1990-12-27 Fujitsu Ltd
JPS5925246A (en) * 1982-08-02 1984-02-09 Nec Corp Manufacture of semiconductor device

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