JPS6421943A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6421943A JPS6421943A JP17719987A JP17719987A JPS6421943A JP S6421943 A JPS6421943 A JP S6421943A JP 17719987 A JP17719987 A JP 17719987A JP 17719987 A JP17719987 A JP 17719987A JP S6421943 A JPS6421943 A JP S6421943A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- coated
- film
- layer
- coated layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the adhesive property of the main metal film and the coated layer of the title semiconductor device without increasing the resistance of the main metal film consisting of Cu or the alloy mainly composed of Cu by a method wherein one or more elements of P and B are contained in the surface which comes in contact with at least the coated layer of the upper layer or the lower layer of the metal film. CONSTITUTION:In the semiconductor device having the metal film 13, consisting of Cu or the alloy mainly composed of Cu and coated layers 12 and 14, at least a kind of element selected from the group consisting of P and B is contained in the surface which comes in contact at least with the metal film 13 of the upper or the lower coated layers 14 and 12. For example, a PSG of 0.5mum in thickness containing about 4mol% of P is formed on the thermally oxided film 11 located on a substrate 10 using a CVD method, and it is used as the coated layer 12. Subsequently, a Cu film 13 of 0.5mum in thickness is coated on the coated layer 12 by conducting a sputtering method at the substrate temperature of 200 deg.C, and the main metal film is obtained. Then, the substrate 10 is heat-treated at 450 deg.C in an H atmosphere, and after the Cu film 13 has been processed using a photoetching method, the coated layer 14 consisting of a PSG of 1mum in thickness is deposited thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17719987A JPS6421943A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17719987A JPS6421943A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421943A true JPS6421943A (en) | 1989-01-25 |
Family
ID=16026911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17719987A Pending JPS6421943A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421943A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02294034A (en) * | 1989-05-08 | 1990-12-05 | Nec Kyushu Ltd | Manufacture of semiconductor integrated circuit |
| US6828353B1 (en) | 1998-09-11 | 2004-12-07 | Victrex Manufacturing Limited | Ion-exchange polymers |
| JP2011003754A (en) * | 2009-06-19 | 2011-01-06 | Mitsubishi Chemicals Corp | Field effect transistor |
-
1987
- 1987-07-17 JP JP17719987A patent/JPS6421943A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02294034A (en) * | 1989-05-08 | 1990-12-05 | Nec Kyushu Ltd | Manufacture of semiconductor integrated circuit |
| US6828353B1 (en) | 1998-09-11 | 2004-12-07 | Victrex Manufacturing Limited | Ion-exchange polymers |
| US6969755B2 (en) | 1998-09-11 | 2005-11-29 | Victrex Manufacturing Limited | Ion-exchange polymers |
| JP2011003754A (en) * | 2009-06-19 | 2011-01-06 | Mitsubishi Chemicals Corp | Field effect transistor |
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