KR940016691A

KR940016691A - Metal thin film deposition method of semiconductor device

Info

Publication number: KR940016691A
Application number: KR1019920025882A
Authority: KR
Inventors: 조경수; 김헌도
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1992-12-28
Filing date: 1992-12-28
Publication date: 1994-07-23

Abstract

반도체 소자의 금속박막 증착방법에서, 실리콘 기판상에 산화막을 형성한 후 콘택을 형성하는 단계와, 상부구조 전체에 확산방지 금속박막층을 일정두께 증착한 후 가열하는 단계와, 상기 구조 상부에 실리콘이 포함된 Al합금을 증착하고, 그후, 실리콘이 없는 Al합금을 증착한 후, 표면을 매끄럽게 하기 위한 Al합금을 증착하는 단계를 포함하는 반도체 소자의 금속박막 증착방법.In the method of depositing a metal thin film of a semiconductor device, forming a contact after forming an oxide film on a silicon substrate, depositing a predetermined thickness of the diffusion barrier metal thin film over the entire superstructure, and heating the silicon, Depositing an included Al alloy, and then depositing an Al alloy without silicon, and then depositing an Al alloy for smoothing the surface.

Description

Metal thin film deposition method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 실리콘 기판 내부에 접합부 형성후 콘택을 형성한 상태의 반도체 소자의 단면도, 제 2 도는 콘택 및 산화막 상부에 확산방지 금속막을 증착한 경우의 반도체 소자의 단면도, 제 3 도는 확산방지 금속박막 상부에 티타늄 또는 티타늄나이트라이드 등의 반응용 금속박막을 증착한 후 연속하여 Al합금을 증착한 경우의 반도체 소자의 단면도, 제 4 도는 금속배선을 형성한 경우의 반도체 소자의 단면도.1 is a cross-sectional view of a semiconductor device in which a contact is formed after forming a junction inside a silicon substrate, and FIG. 2 is a cross-sectional view of a semiconductor device when a diffusion preventing metal film is deposited on top of a contact and an oxide film, and FIG. Fig. 4 is a cross sectional view of a semiconductor device in the case of depositing a metal thin film for reaction such as titanium or titanium nitride and subsequently Al alloy is deposited, and Fig. 4 is a cross sectional view of the semiconductor device in the case of forming a metal wiring.

Claims

In the method of depositing a metal thin film of a semiconductor device, after forming the junction part 2 inside the silicon substrate 1, the oxide film 3 is deposited on the entire upper structure, and the photomasking process and the oxide film etching process are performed. Forming a contact 20 in the upper structure, and depositing a diffusion barrier metal thin film layer of titanium (4) and titanium nitride (5) on the entire upper structure by using a sputtering device to a certain thickness and then improving the characteristics of the 500 Heating at a temperature below < RTI ID = 0.0 > degree C, < / RTI > and depositing a metal, such as titanium or titanium nitride (6), on the diffusion preventing metal thin film layer with a sputtering device and subsequently depositing the Al alloy (7) at a low temperature of less than 150 ° C. In another sputtering chamber, deposited at a temperature above 450 ° C. to form an Al alloy 8 and finally deposited to smooth the surface of the Al alloy 9 at a temperature below 150 ° C. A metal film deposition method of a semiconductor device comprising the steps defined.

The method of claim 1, wherein in the first step of Al alloy deposition, Al alloy 7 containing silicon is used, and Al alloys 8 and 9 formed thereon use Al alloy without silicon. Metal thin film deposition method of a semiconductor device.

2. The method of claim 1, comprising exposing the substrate to the atmosphere after deposition of the second Al alloy (8) and then depositing the last Al alloy (9) with a sputtering device.

※ Note: The disclosure is based on the initial application.