JPH03131001A - Resistance temperature sensor - Google Patents
Resistance temperature sensorInfo
- Publication number
- JPH03131001A JPH03131001A JP26811189A JP26811189A JPH03131001A JP H03131001 A JPH03131001 A JP H03131001A JP 26811189 A JP26811189 A JP 26811189A JP 26811189 A JP26811189 A JP 26811189A JP H03131001 A JPH03131001 A JP H03131001A
- Authority
- JP
- Japan
- Prior art keywords
- resistance temperature
- film
- temperature sensor
- resistance
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052786 argon Inorganic materials 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 241001239362 Periandra coccinea Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、薄膜温度センサに関するもので、ニッケル、
鉄の金属皮膜を感温膜として用いた抵抗温度センサを提
供するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a thin film temperature sensor.
The present invention provides a resistance temperature sensor using an iron metal film as a temperature-sensitive film.
従来の薄膜を用いた抵抗温度センサは絶靜基板上に所望
あ組成比の合金又は単一金属を着膜しこれを熱処理する
事により所望の抵抗温度係数を得ていた。In the conventional resistance temperature sensor using a thin film, a desired resistance temperature coefficient is obtained by depositing an alloy or a single metal of a desired composition ratio on an insulated substrate and heat-treating the film.
〔この発明が解決しようとしている問題点〕前述の製造
方法では熱処理により抵抗温度係数を制御出来る範囲が
限定され各冨の抵抗温度係数が必要な場合にはそれぞれ
着膜する材料の組成比を変える必要があった。[Problems to be solved by the present invention] In the above-mentioned manufacturing method, the range in which the temperature coefficient of resistance can be controlled by heat treatment is limited, and when different temperature coefficients of resistance are required, the composition ratio of the materials to be deposited is changed. There was a need.
本発明は、ニッケル、鉄を層状に着膜しこれを熱処理温
度によりニッケルー鉄間での拡散をＩ制御し任意の抵抗
温度係数の抵抗温度センサを提供するものである。The present invention provides a resistance temperature sensor having an arbitrary resistance temperature coefficient by depositing nickel and iron in layers and controlling the diffusion between nickel and iron by controlling the heat treatment temperature.
〔実施例１〕 本発明の実施例を図面を用いて説明する。[Example 1] Embodiments of the present invention will be described using the drawings.
第１図は本発明による抵抗温度センサの構成の断面図で
ある。FIG. 1 is a sectional view of the configuration of a resistance temperature sensor according to the present invention.
図１において厚さＱ、４ｍｍのアルミナ磁器基板を絶縁
基体とし、その表面に真空蒸着法にて鉄を７１０人彼透
した。続いて二ッケルを２９０人波着し！８温戊をｊ唇
な。In FIG. 1, an alumina porcelain substrate with a thickness Q of 4 mm was used as an insulating base, and 710 layers of iron was deposited on its surface by vacuum evaporation. Next, 290 people arrived at Nickel! 8 Hot lips.
このＰＡｆ’ｌ状着膜体をアルゴンガス中で４００”Ｃ
１時間の熱処理を施し感温膜とした。This PAf'l-like deposited body was heated to 40"C in argon gas.
Heat treatment was performed for 1 hour to obtain a temperature-sensitive film.
この感温膜をフォトエツチングにより第２図に示すよう
なバタンを形成した。This temperature-sensitive film was photo-etched to form a pattern as shown in FIG.
さらに第３図に示す構造の電極と保護膜をつけ抵抗温度
センサを得た。Furthermore, an electrode and a protective film having the structure shown in FIG. 3 were attached to obtain a resistance temperature sensor.
この薄膜抵抗温度センサの抵抗温度係数は３０００ ｐ
ｐｍ／’Ｃであった。The resistance temperature coefficient of this thin film resistance temperature sensor is 3000 p
pm/'C.
本実施例における熱処理雰囲気は真空中あるいはアルゴ
ンガス以外の不活性ガス中でもよ０゜
〔実施例２〕
本発明の実施例を図面を用いて説明する。The heat treatment atmosphere in this example was 0° in vacuum or in an inert gas other than argon gas. [Example 2] An example of the present invention will be described with reference to the drawings.
第１図は本発明による抵抗温度センサの構成の断面図で
ある。FIG. 1 is a sectional view of the configuration of a resistance temperature sensor according to the present invention.
図１において厚さ０．４ｍｍのアルミナ磁器基板を絶緯
基体とし、その表面に真空蒸着法にて鉄を７１０人波着
した。続いてニッケルを２９０人波着し感温膜を得た。In FIG. 1, an alumina porcelain substrate with a thickness of 0.4 mm was used as a base substrate, and 710 layers of iron were deposited on the surface by vacuum evaporation. Next, 290 layers of nickel were deposited to obtain a temperature-sensitive film.
この該層状着膜体をアルゴンガス中で５００℃１時間の
熱処理を施し感温膜とした。This layered film body was heat-treated at 500° C. for 1 hour in argon gas to form a temperature-sensitive film.
このｓｗＬｇをフォトエツチングにより第２図に示すよ
うなバタンを形成した。This swLg was photo-etched to form a button as shown in FIG.
さらに第３図に示す構造の！極と保護膜をつけ抵抗温２
度センサを得た。Furthermore, the structure shown in Figure 3! Attach the electrode and protective film to the resistance temperature 2
I got a degree sensor.
この３膜抵抗温度センサの抵抗温度係数は２１００ ｐ
ｐｍ／’Ｃであった。The resistance temperature coefficient of this three-film resistance temperature sensor is 2100 p.
pm/'C.
本実施例における熱処理雰囲気は真空中あるいはアルゴ
ンガス以外の不活性ガス中でもよい。The heat treatment atmosphere in this embodiment may be a vacuum or an inert gas other than argon gas.
〔実施例３〕 本発明の実施例を図面を用いて説明する。[Example 3] Embodiments of the present invention will be described using the drawings.
Ｗ１図は本発明による抵抗温度センサの構成の断面図で
ある。Figure W1 is a sectional view of the configuration of a resistance temperature sensor according to the present invention.
図１において厚さＱ、４ｍｍのアルミナ磁器基鈑を絶シ
基体とし、その表面に真空ｎ暦法にて鉄を７１０人波着
した。続いてニッケルを２９０人波着しＩ６温膜を得た
。In FIG. 1, an alumina porcelain base plate with a thickness Q of 4 mm was used as a solid base, and 710 layers of iron were deposited on the surface using the vacuum n-calendar method. Next, 290 people deposited nickel to obtain an I6 hot film.
このＴｆｘＮＪ状着膜体をアルゴンガス中で６５０℃１
時間の熱処理を施し感温膜とした。This TfxNJ-shaped film-coated body was heated at 650℃1 in argon gas.
It was heat-treated for several hours to form a temperature-sensitive film.
この感温膜をフォトエツチングにより第２図に示すよう
なバタンを形成した。This temperature-sensitive film was photo-etched to form a pattern as shown in FIG.
さらに第３図に示す構造の電極と保護膜をつけ抵抗温度
センサを得た。Furthermore, an electrode and a protective film having the structure shown in FIG. 3 were attached to obtain a resistance temperature sensor.
この薄膜抵抗温度センサの抵抗温度係数は１１００ ｐ
Ｐｌ／’ｃであった。The resistance temperature coefficient of this thin film resistance temperature sensor is 1100 p
Pl/'c.
本実施例における熱処理雰囲気は真空中あるいはアルゴ
ンガス以外の不活性ガス中でもよい。The heat treatment atmosphere in this embodiment may be a vacuum or an inert gas other than argon gas.
実施例１．２．３、において説明した熱処理温度、時間
と温度係数の関係を図４に示します。Figure 4 shows the relationship between the heat treatment temperature, time, and temperature coefficient explained in Example 1.2.3.
前記の製造方法で熱処理温度を変化させて作成した抵抗
温度センサの２５℃−６５°Ｃの抵抗温度係数と熱処理
温度の関係を図４に示した。FIG. 4 shows the relationship between the resistance temperature coefficient at 25°C to 65°C and the heat treatment temperature of the resistance temperature sensor manufactured by the above manufacturing method by varying the heat treatment temperature.
図４で明らかなように本発明の製造方法によれば１８！
類の着膜基板で多種意の抵抗温度係数の抵抗温度センサ
を得ることができる。As is clear from FIG. 4, according to the manufacturing method of the present invention, 18!
Resistance temperature sensors with various resistance temperature coefficients can be obtained using similar film-coated substrates.
ここで抵抗温度係数（ＴＣＲ）は
ＴＣＲ（ｐｐｍ／’Ｃ） ＝ Ｒ”−Ｒ” ’Ｒ
２Ｓ ｘ 面×１０゜
Ｒｓｓ ： ６５℃の抵抗値
Ｒ２Ｓ：２５℃の抵抗値
である。Here, the temperature coefficient of resistance (TCR) is TCR (ppm/'C) = R''-R'''R
2S x plane x 10°Rss: resistance value at 65°C R2S: resistance value at 25°C.
第１図は、本発明による抵抗温度センサの構成図、第２
図はｅＩ温膜の構造図であり、第３図は抵抗温度センサ
の構造図である。
また第４図は本実施例により作成した抵抗温度センサの
ＴＣＲと熱処理温度の関係を図示したものである。
各図中の各符号は次の各構成を示す。
１： 絶縁基板
２： 鉄薄膜
３： ニッケルβ腰
４： ニッケル、鉄薄膜
５： 電極
６： 保ｔ！ｌ塗装
第２図
第３図FIG. 1 is a configuration diagram of a resistance temperature sensor according to the present invention, and FIG.
The figure is a structural diagram of an eI hot film, and FIG. 3 is a structural diagram of a resistance temperature sensor. Further, FIG. 4 illustrates the relationship between the TCR and the heat treatment temperature of the resistance temperature sensor produced according to this example. Each symbol in each figure indicates the following configuration. 1: Insulating substrate 2: Iron thin film 3: Nickel beta film 4: Nickel, iron thin film 5: Electrode 6: Hold! l Painting Figure 2 Figure 3
Claims (1)
処理により任意の抵抗温度係数を得ることを特徴とした
抵抗温度センサの製造方法。A method for manufacturing a resistance temperature sensor, characterized by forming a thin film of nickel and iron in a layered manner on an insulating substrate, and obtaining an arbitrary temperature coefficient of resistance by heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26811189A JPH03131001A (en) | 1989-10-17 | 1989-10-17 | Resistance temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26811189A JPH03131001A (en) | 1989-10-17 | 1989-10-17 | Resistance temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03131001A true JPH03131001A (en) | 1991-06-04 |
Family
ID=17454044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26811189A Pending JPH03131001A (en) | 1989-10-17 | 1989-10-17 | Resistance temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03131001A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430428A (en) * | 1991-02-15 | 1995-07-04 | Siemens Aktiengesellschaft | High-temperature sensor made of metal of the platinum group |
| CN102692280A (en) * | 2011-03-24 | 2012-09-26 | 兴化市新兴电子有限公司 | Ntc temperature sensor chip electrode structure |
| CN107806939A (en) * | 2017-09-28 | 2018-03-16 | 河南汇纳科技有限公司 | A kind of high reliability temperature sensor |
-
1989
- 1989-10-17 JP JP26811189A patent/JPH03131001A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430428A (en) * | 1991-02-15 | 1995-07-04 | Siemens Aktiengesellschaft | High-temperature sensor made of metal of the platinum group |
| CN102692280A (en) * | 2011-03-24 | 2012-09-26 | 兴化市新兴电子有限公司 | Ntc temperature sensor chip electrode structure |
| CN107806939A (en) * | 2017-09-28 | 2018-03-16 | 河南汇纳科技有限公司 | A kind of high reliability temperature sensor |
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