CN107806939A - A kind of high reliability temperature sensor - Google Patents
A kind of high reliability temperature sensor Download PDFInfo
- Publication number
- CN107806939A CN107806939A CN201710895609.3A CN201710895609A CN107806939A CN 107806939 A CN107806939 A CN 107806939A CN 201710895609 A CN201710895609 A CN 201710895609A CN 107806939 A CN107806939 A CN 107806939A
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- China
- Prior art keywords
- rtd
- bar
- lead
- temperature sensor
- high reliability
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of high reliability temperature sensor, including RTD bar, silicon pinboard and monocrystalline carrier, the RTD bar is broken line type structure, the RTD bar both ends connect the first lead and the second lead respectively, first lead and the second lead may be contained within the silicon pinboard upper side, first lead and the second lead terminal connect the first lead terminal and the second lead terminal respectively, the silicon pinboard is provided with through hole, first projection is set on the inside of the through hole, first projection is connected with contiguous block, the contiguous block on the outside of the monocrystalline carrier with being connected, the RTD bar is fixedly installed on the upside of monocrystalline carrier；The present invention is by setting RTD bar, the silicon pinboard with through hole and monocrystalline carrier, realize the hanging monocrystalline carrier support of RTD bar, reduce the heat transfer between other devices on RTD bar and its substrate and substrate, reduce cross jamming, optimize the heat-insulating capability of supporting construction, improve measurement accuracy.
Description
Technical field
The present invention relates to a kind of temperature sensor, and in particular to a kind of high reliability temperature sensor.
Background technology
With the development of modern high technology technology, to being applicable for the reliability of temperature transducer, response time and environment
Property propose more strict requirements, this just temperature-controlled precision to sensor and structure design control, the especially essence to temperature
Really control proposes higher requirement, and Thermistor Temperature Measurement is that the resistance value based on technology conductor changes this with the change of temperature
One characteristic carries out temperature survey, therefore need to only measure the change in resistance of temperature sensitive resister, so that it may knows corresponding temperature value, uses at present
In each field temperature detection, mainly using thermistor, RTD or bimetallic equitemperature sensor, thermometric is ineffective, and
Easily cause damage, have higher temperature-coefficient of electrical resistance, high temperature resistant, corrosion-resistant, temperature-measuring range big due to platinum and its alloy and
The characteristics such as strength of materials height, and be widely adopted in temperature measuring equipment, the temperature transducer for being integrated in control device, thermometric
When temperature-sensitive element by the hot interference effect of heat conduction of its substrate and substrate other devices, significantly affect the accuracy of thermometric, therefore,
A kind of temperature sensor is designed, being capable of rapidly and accurately sense temperature.
The content of the invention
It is an object of the invention to provide a kind of high reliability temperature sensor, reduces RTD bar substrate heat transfer, drop
It is low to intersect heat interference, optimize the heat-insulating capability of supporting construction, improve measurement accuracy.
To achieve the above object, the present invention provides following technical scheme：A kind of high reliability temperature sensor, including platinum electricity
Hinder bar, silicon pinboard and monocrystalline carrier, the RTD bar is broken line type structure, and the RTD article both ends connect the respectively
One lead and the second lead, first lead and the second lead may be contained within the silicon pinboard upper side, and described first draws
Line and the second lead terminal connect the first lead terminal and the second lead terminal respectively, and the silicon pinboard is provided with through hole, institute
State and set on the inside of through hole first raised, first projection is connected with contiguous block, the contiguous block with outside the monocrystalline carrier
Side is connected, and the RTD bar is fixedly installed on the upside of monocrystalline carrier.
Preferably, the second projection being connected with contiguous block is set on the outside of the monocrystalline carrier.
Preferably, the broken line type structure of the RTD bar is RTD bar bending forming, the pass between each bending segment
It is one kind to be mutually perpendicular to, being parallel to each other, and the distance between bending segment being parallel to each other is not less than 2 μm.
Preferably, the cross sectional shape of the RTD bar is circle, and this circular radius is 1-3 μm.
Preferably, the cross sectional shape of the RTD bar is square, and this square length of side is 2-5 μm.
Preferably, the through hole is square opening, and it is raised that first is respectively provided with the middle part of each edge of this square opening.
Preferably, the through hole is circular port, and the first projection, and the first raised quantity are uniformly arranged on the inside of this circular port
For 2-6.
Preferably, the quantity of the described first raised, contiguous block and the second projection is identical.
Compared with prior art, beneficial effects of the present invention are as follows：
1st, the present invention realizes the hanging of RTD bar by setting RTD bar, the silicon pinboard with through hole and monocrystalline carrier
Monocrystalline carrier supports, and reduces the heat transfer between other devices on RTD bar and its substrate and substrate, reduces cross jamming,
Optimize the heat-insulating capability of supporting construction, improve measurement accuracy.
2nd, the present invention by the shape of RTD bar by being designed as broken line type structure, to obtain big resistance in small area
Value, increase sensitivity and the reliability of temperature measuring unit.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention；
In figure：1 RTD bar, 2 first leads, 3 first lead terminals, 4 second leads, 5 second lead terminals, 6 silicon pinboards,
7 through holes, 8 first projections, 9 contiguous blocks, 10 monocrystalline carriers, 11 second projections.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Referring to Fig. 1, a kind of high reliability temperature sensor, including RTD bar 1, silicon pinboard 6 and monocrystalline carrier
10, the RTD bar 1 is broken line type structure, by the way that the shape of RTD bar 1 is designed as into broken line type structure, so as in facet
Big resistance is obtained in product, increases sensitivity and the reliability of temperature measuring unit, the broken line type structure of the RTD bar 1 is RTD
The bending forming of bar 1, the relation between each bending segment are the one kind for being mutually perpendicular to, being parallel to each other, and the bending segment being parallel to each other
The distance between be arranged to 3 μm, the cross sectional shape of the RTD bar 1 is circle, and this circular radius is 2 μm, the platinum
The both ends of resistor stripe 1 connect the first lead 2 and the second lead 4 respectively, and the lead 4 of the first lead 2 and second may be contained within described
The upper side of silicon pinboard 6, the end of 2 and second lead of the first lead 4 connect the first lead terminal 3 and the second lead end respectively
Son 5, the silicon pinboard 6 are provided with through hole 7, and the inner side of through hole 7 sets the first projection 8, and the through hole 7 is square opening, and
Be respectively provided with the first projection 8 in the middle part of each edge of this square opening, first projection 8 is connected with contiguous block 9, contiguous block 9 using every
Hot material, it is described for connecting the heat transfer of silicon pinboard 6 and monocrystalline carrier 10, cut-off silicon pinboard 6 and its contained device
Contiguous block 9 is connected with the outside of monocrystalline carrier 10, and the outside of monocrystalline carrier 10 sets second be connected with contiguous block 9
Projection 11, first projection 8, contiguous block 9 are identical with the quantity of the second projection 11, and the RTD bar 1 is fixedly installed on list
The upside of crystal silicon carrier 10.
The characteristic R that the present invention is varied with temperature using the resistance of the RTD bar 1 of sputteringt=R0(1+αt+βt2+γt3
+ ...) temperature-sensing element of temperature sensor is used as, because the platinum change of resistivity and temperature within the scope of very wide temperature is linear
Relation, therefore in certain temperature range, high-order term can be saved, and resistance and the temperature of RTD bar 1 are reduced to linear pass
System, when being passed through micro-current at resistance both ends, the resistance of resistance can be obtained by measuring the voltage change at both ends, according to platinum
Resistance coefficient 0.00374/oC, estimation, in the case where initial resistivity value is 200, resolution ratio is 0.75/oC, meets essence
Degree is required, the shape of RTD bar 1 is designed as into broken line type structure, and RTD bar 1 is manufactured first by the way of positive photoresist stripping,
Due to the stability of platinum, RTD bar 1 is not had an impact during follow-up production and packaging technology.
In summary：The present invention is drawn by RTD bar 1, the first lead 2, the first lead terminal 3, the second lead 4, second
The cooperation of line terminals 5, silicon pinboard 6, through hole 7, the first projection 8, contiguous block 9 and monocrystalline carrier 10, solves RTD temperature
The problem of heated interference of degree sensor causes to influence measurement accuracy, realize that the hanging monocrystalline carrier 10 of RTD bar 1 supports, subtract
Heat transfer on few RTD bar 1 and its substrate and substrate between other devices, reduces hot cross jamming, optimizes supporting construction
Heat-insulating capability, improve measurement accuracy.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (8)
1. a kind of high reliability temperature sensor, including RTD bar（1）, silicon pinboard（6）And monocrystalline carrier（10）, it is special
Sign is：The RTD bar（1）For broken line type structure, the RTD bar（1）Both ends connect the first lead respectively（2）With
Two leads（4）, first lead（2）With the second lead（4）It may be contained within the silicon pinboard（6）Upper side, described first
Lead（2）With the second lead（4）End connects the first lead terminal respectively（3）With the second lead terminal（5）, the silicon pinboard
（6）It is provided with through hole（7）, the through hole（7）Inner side sets the first projection（8）, described first is raised（8）It is connected with contiguous block
（9）, the contiguous block（9）With the monocrystalline carrier（10）Outside connects, the RTD bar（1）It is fixedly installed on monocrystalline silicon
Carrier（10）Upside.
A kind of 2. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The monocrystalline carrier（10）Outside
Side is set and contiguous block（9）The second of connection is raised（11）.
A kind of 3. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The RTD bar（1）Folding
Linear structure is RTD bar（1）Bending forming, the relation between each bending segment is the one kind for being mutually perpendicular to, being parallel to each other,
And the distance between bending segment being parallel to each other is not less than 2 μm.
A kind of 4. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The RTD bar（1）Cut
Face is shaped as circle, and this circular radius is 1-3 μm.
A kind of 5. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The RTD bar（1）Cut
Face is shaped as square, and this square length of side is 2-5 μm.
A kind of 6. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The through hole（7）For square opening,
And it is raised that first is respectively provided with the middle part of each edge of this square opening（8）.
A kind of 7. high reliability temperature sensor as claimed in claim 1, it is characterised in that：The through hole（7）For circular port,
It is raised that first is uniformly arranged on the inside of this circular port（8）, and first is raised（8）Quantity be 2-6.
A kind of 8. high reliability temperature sensor as described in claim 1 or claim 2, it is characterised in that：Described first
It is raised（8）, contiguous block（9）It is raised with second（11）Quantity it is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710895609.3A CN107806939A (en) | 2017-09-28 | 2017-09-28 | A kind of high reliability temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710895609.3A CN107806939A (en) | 2017-09-28 | 2017-09-28 | A kind of high reliability temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107806939A true CN107806939A (en) | 2018-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710895609.3A Pending CN107806939A (en) | 2017-09-28 | 2017-09-28 | A kind of high reliability temperature sensor |
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| Country | Link |
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| CN (1) | CN107806939A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112504498A (en) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03131001A (en) * | 1989-10-17 | 1991-06-04 | Tama Electric Co Ltd | Resistance temperature sensor |
| JPH03214031A (en) * | 1990-01-18 | 1991-09-19 | Matsushita Electric Ind Co Ltd | Temperature sensor comprising platinum thin film |
| JPH03265101A (en) * | 1990-03-15 | 1991-11-26 | Matsushita Electric Ind Co Ltd | Platinum temperature sensor |
| JPH03274707A (en) * | 1990-03-24 | 1991-12-05 | Anritsu Corp | Temperature sensor |
| US5197804A (en) * | 1989-11-17 | 1993-03-30 | Murata Manufacturing Co., Ltd. | Resistance temperature sensor |
-
2017
- 2017-09-28 CN CN201710895609.3A patent/CN107806939A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03131001A (en) * | 1989-10-17 | 1991-06-04 | Tama Electric Co Ltd | Resistance temperature sensor |
| US5197804A (en) * | 1989-11-17 | 1993-03-30 | Murata Manufacturing Co., Ltd. | Resistance temperature sensor |
| JPH03214031A (en) * | 1990-01-18 | 1991-09-19 | Matsushita Electric Ind Co Ltd | Temperature sensor comprising platinum thin film |
| JPH03265101A (en) * | 1990-03-15 | 1991-11-26 | Matsushita Electric Ind Co Ltd | Platinum temperature sensor |
| JPH03274707A (en) * | 1990-03-24 | 1991-12-05 | Anritsu Corp | Temperature sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112504498A (en) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
| CN112504498B (en) * | 2021-02-03 | 2021-04-20 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
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Application publication date: 20180316 |